John F. Wager
John F. Wager
Professor Emeritus, EECS, Oregon State University
Verified email at ece.orst.edu
Title
Cited by
Cited by
Year
Semiconductor device
HQ Chiang, RL Hoffman, D Hong, NL Dehuff, JF Wager
US Patent 7,145,174, 2006
33882006
Transistor structures
JF Wager III, RL Hoffman
US Patent 7,339,187, 2008
33792008
ZnO-based transparent thin-film transistors
RL Hoffman, BJ Norris, JF Wager
Applied Physics Letters 82 (5), 733-735, 2003
17442003
Transparent electronics
JF Wager
science 300 (5623), 1245-1246, 2003
9492003
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
HQ Chiang, JF Wager, RL Hoffman, J Jeong, DA Keszler
Applied Physics Letters 86 (1), 013503, 2005
9292005
Transparent thin-film transistors with zinc indium oxide channel layer
NL Dehuff, ES Kettenring, D Hong, HQ Chiang, JF Wager, RL Hoffman, ...
Journal of Applied Physics 97 (6), 064505, 2005
5222005
Transparent electronics
JF Wager, DA Keszler, RE Presley
Springer, 2008
4092008
Tin oxide transparent thin-film transistors
RE Presley, CL Munsee, CH Park, D Hong, JF Wager, DA Keszler
Journal of Physics D: Applied Physics 37 (20), 2810, 2004
3962004
Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs
ST Meyers, JT Anderson, CM Hung, J Thompson, JF Wager, DA Keszler
Journal of the American Chemical Society 130 (51), 17603-17609, 2008
3922008
Spin-coated zinc oxide transparent transistors
BJ Norris, J Anderson, JF Wager, DA Keszler
Journal of Physics D: Applied Physics 36 (20), L105, 2003
3752003
Transistor structures having a transparent channel
JF Wager III, RL Hoffman
US Patent 7,189,992, 2007
2782007
p-Type oxides for use in transparent diodes
J Tate, MK Jayaraj, AD Draeseke, T Ulbrich, AW Sleight, KA Vanaja, ...
Thin solid films 411 (1), 119-124, 2002
2222002
Transparent ring oscillator based on indium gallium oxide thin-film transistors
RE Presley, D Hong, HQ Chiang, CM Hung, RL Hoffman, JF Wager
Solid-State Electronics 50 (3), 500-503, 2006
1852006
Thin film transistor with a passivation layer
R Hoffman, J Wager, D Hong, H Chiang
US Patent 7,382,421, 2008
1772008
Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors
HQ Chiang, BR McFarlane, D Hong, RE Presley, JF Wager
Journal of Non-Crystalline Solids 354 (19-25), 2826-2830, 2008
1762008
Constant-voltage-bias stress testing of a-IGZO thin-film transistors
K Hoshino, D Hong, HQ Chiang, JF Wager
IEEE Transactions on Electron Devices 56 (7), 1365-1370, 2009
1752009
Iron chalcogenide photovoltaic absorbers
L Yu, S Lany, R Kykyneshi, V Jieratum, R Ravichandran, B Pelatt, ...
Advanced Energy Materials 1 (5), 748-753, 2011
1582011
An amorphous oxide semiconductor thin-film transistor route to oxide electronics
JF Wager, B Yeh, RL Hoffman, DA Keszler
Current Opinion in Solid State and Materials Science 18 (2), 53-61, 2014
1482014
Atomic model for the EL2 defect in GaAs
JF Wager, JA Van Vechten
Physical Review B 35 (5), 2330, 1987
1451987
Advancing MIM electronics: Amorphous metal electrodes
EW Cowell III, N Alimardani, CC Knutson, JF Conley Jr, DA Keszler, ...
Advanced Materials 23 (1), 74-78, 2011
1392011
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