متابعة
David Gonzalez Robledo
David Gonzalez Robledo
Catedrático de universidad, Universidad de Cádiz
بريد إلكتروني تم التحقق منه على gm.uca.es
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Effect of COVID-19 pandemic lockdowns on planned cancer surgery for 15 tumour types in 61 countries: an international, prospective, cohort study
J Glasbey, A Ademuyiwa, A Adisa, E AlAmeer, AP Arnaud, F Ayasra, ...
The Lancet Oncology 22 (11), 1507-1517, 2021
1892021
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
V Lebedev, V Cimalla, T Baumann, O Ambacher, FM Morales, JG Lozano
Journal of applied physics 100 (9), 2006
1012006
Determination of the composition of InxGa1− xN from strain measurements
FM Morales, D González, JG Lozano, R García, S Hauguth-Frank, ...
Acta Materialia 57 (19), 5681-5692, 2009
922009
Identification of III–N nanowire growth kinetics via a marker technique
R Songmuang, T Ben, B Daudin, D González, E Monroy
Nanotechnology 21 (29), 295605, 2010
832010
Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
DF Reyes, F Bastiman, CJ Hunter, DL Sales, AM Sanchez, JPR David, ...
Nanoscale research letters 9, 1-8, 2014
702014
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ...
Journal of applied physics 100 (9), 2006
642006
Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods
J Rodrigues, T Holz, R Fath Allah, D Gonzalez, T Ben, MR Correia, ...
Scientific Reports 5 (1), 10783, 2015
502015
Misfit relaxation of InN quantum dots: Effect of the GaN capping layer
JG Lozano, AM Sánchez, R García, D Gonzalez, O Briot, S Ruffenach
Applied physics letters 88 (15), 2006
462006
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ...
Acta Materialia 58 (12), 4120-4125, 2010
422010
Coalescence aspects of III-nitride epitaxy
V Lebedev, K Tonisch, F Niebelschütz, V Cimalla, D Cengher, I Cimalla, ...
Journal of Applied Physics 101 (5), 2007
422007
Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
JG Lozano, AM Sánchez, R García, D González, D Araújo, S Ruffenach, ...
Applied Physics Letters 87 (26), 2005
402005
Ch. Y. Wang, V. Cimalla, and O. Ambacher
JG Lozano, FM Morales, R García, D González, V Lebedev
Appl. Phys. Lett 90, 091901, 2007
392007
Machine learning risk prediction of mortality for patients undergoing surgery with perioperative SARS-CoV-2: the COVIDSurg mortality score
COVIDSurg Collaborative
The British journal of surgery 108 (11), 1274, 2021
362021
Study of morphological and related properties of aligned zinc oxide nanorods grown by vapor phase transport on chemical bath deposited buffer layers
D Byrne, R Fath Allah, T Ben, D Gonzalez Robledo, B Twamley, ...
Crystal growth & design 11 (12), 5378-5386, 2011
362011
Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires
R Songmuang, D Kalita, P Sinha, M den Hertog, R André, T Ben, ...
Applied Physics Letters 99 (14), 2011
332011
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
JM Ulloa, JM Llorens, B Alén, DF Reyes, DL Sales, D González, A Hierro
Applied Physics Letters 101 (25), 2012
322012
Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
M Herrera, QM Ramasse, DG Morgan, D Gonzalez, J Pizarro, A Yanez, ...
Physical Review B 80 (12), 125211, 2009
312009
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ...
Solar Energy Materials and Solar Cells 159, 282-289, 2017
302017
Strain-balanced type-II superlattices for efficient multi-junction solar cells
A Gonzalo, AD Utrilla, DF Reyes, V Braza, JM Llorens, D Fuertes Marrón, ...
Scientific reports 7 (1), 4012, 2017
282017
Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy
L Dominguez, DF Reyes, F Bastiman, DL Sales, RD Richards, D Mendes, ...
Applied Physics Express 6 (11), 112601, 2013
282013
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مقالات 1–20