Chee Hing Tan
Chee Hing Tan
Verified email at sheffield.ac.uk - Homepage
Title
Cited by
Cited by
Year
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ Marshall, DJ Massey, JS Ng, CH Tan, M Hopkinson, ...
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
742007
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 111107, 2008
732008
Avalanche noise measurement in thin Si diodes
CH Tan, JC Clark, JPR David, GJ Rees, SA Plimmer, RC Tozer, ...
Applied Physics Letters 76 (26), 3926-3928, 2000
652000
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
602006
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
552010
Avalanche noise characteristics in submicron InP diodes
LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
552008
Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes
CH Tan, JPR David, SA Plimmer, GJ Rees, RC Tozer, R Grey
IEEE Transactions on Electron Devices 48 (7), 1310-1317, 2001
552001
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
542002
Temperature dependence of leakage current in InAs avalanche photodiodes
PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
502011
Extremely low excess noise in InAs electron avalanche photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
IEEE Photonics Technology Letters 21 (13), 866-868, 2009
502009
Material considerations for avalanche photodiodes
JPR David, CH Tan
IEEE Journal of selected topics in quantum electronics 14 (4), 998-1009, 2008
492008
Impact ionization in InAs electron avalanche photodiodes
ARJ Marshall, JPR David, CH Tan
IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010
482010
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As
JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
482003
Demonstration of InAsBi photoresponse beyond 3.5 μm
IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 171109, 2014
422014
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
412011
Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end
KS Lau, CH Tan, BK Ng, KF Li, RC Tozer, JPR David, GJ Rees
Measurement science and technology 17 (7), 1941, 2006
412006
Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
ARJ Marshall, P Vines, PJ Ker, JPR David, CH Tan
IEEE Journal of Quantum Electronics 47 (6), 858-864, 2011
382011
Temperature dependence of AlGaAs soft X-ray detectors
AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
382010
Fabrication of InAs photodiodes with reduced surface leakage current
ARJ Marshall, CH Tan, JPR David, JS Ng, M Hopkinson
Optical Materials in Defence Systems Technology IV 6740, 67400H, 2007
342007
The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes
AM Barnett, JE Lees, DJ Bassford, JS Ng, CH Tan, N Babazadeh, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011
302011
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Articles 1–20