| Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors SL Li, K Tsukagoshi, E Orgiu, P Samorě Chemical Society Reviews 45 (1), 118-151, 2016 | 380 | 2016 |
| Ambipolar MoTe2 transistors and their applications in logic circuits YF Lin, Y Xu, ST Wang, SL Li, M Yamamoto, A Aparecido‐Ferreira, W Li, ... Advanced Materials 26 (20), 3263-3269, 2014 | 370 | 2014 |
| Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates SL Li, H Miyazaki, H Song, H Kuramochi, S Nakaharai, K Tsukagoshi ACS nano 6 (8), 7381-7388, 2012 | 346 | 2012 |
| Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors SL Li, K Wakabayashi, Y Xu, S Nakaharai, K Komatsu, WW Li, YF Lin, ... Nano letters 13 (8), 3546-3552, 2013 | 307 | 2013 |
| Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2 M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ... ACS nano 8 (4), 3895-3903, 2014 | 283 | 2014 |
| High-performance top-gated monolayer SnS 2 field-effect transistors and their integrated logic circuits HS Song, SL Li, L Gao, Y Xu, K Ueno, J Tang, YB Cheng, K Tsukagoshi Nanoscale 5 (20), 9666-9670, 2013 | 275 | 2013 |
| Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO2 Heterojunction Nanofibers W Tian, T Zhai, C Zhang, SL Li, X Wang, F Liu, D Liu, X Cai, K Tsukagoshi, ... Advanced Materials 25 (33), 4625-4630, 2013 | 258 | 2013 |
| Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature S Wang, S Li, T Chervy, A Shalabney, S Azzini, E Orgiu, JA Hutchison, ... Nano letters 16 (7), 4368-4374, 2016 | 245 | 2016 |
| Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS‐ZnO Heterostructure Nanofilms W Tian, C Zhang, T Zhai, SL Li, X Wang, J Liu, X Jie, D Liu, M Liao, ... Advanced Materials 26 (19), 3088-3093, 2014 | 239 | 2014 |
| Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors Z Yu, ZY Ong, S Li, JB Xu, G Zhang, YW Zhang, Y Shi, X Wang Advanced Functional Materials 27 (19), 1604093, 2017 | 230 | 2017 |
| Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition HS Song, SL Li, H Miyazaki, S Sato, K Hayashi, A Yamada, N Yokoyama, ... Scientific reports 2, 337, 2012 | 220 | 2012 |
| Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers SL Li, K Komatsu, S Nakaharai, YF Lin, M Yamamoto, X Duan, ... ACS nano 8 (12), 12836-12842, 2014 | 154 | 2014 |
| Low operating bias and matched input− output characteristics in graphene logic inverters SL Li, H Miyazaki, A Kumatani, A Kanda, K Tsukagoshi Nano letters 10 (7), 2357-2362, 2010 | 142 | 2010 |
| Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors S Nakaharai, M Yamamoto, K Ueno, YF Lin, SL Li, K Tsukagoshi ACS nano 9 (6), 5976-5983, 2015 | 108 | 2015 |
| Flexible SnO 2 hollow nanosphere film based high-performance ultraviolet photodetector W Tian, C Zhang, T Zhai, SL Li, X Wang, M Liao, K Tsukagoshi, D Golberg, ... Chemical Communications 49 (36), 3739-3741, 2013 | 96 | 2013 |
| InSe: a two-dimensional material with strong interlayer coupling Y Sun, S Luo, XG Zhao, K Biswas, SL Li, L Zhang Nanoscale 10 (17), 7991-7998, 2018 | 90 | 2018 |
| Conduction tuning of graphene based on defect-induced localization S Nakaharai, T Iijima, S Ogawa, S Suzuki, SL Li, K Tsukagoshi, S Sato, ... ACS nano 7 (7), 5694-5700, 2013 | 89 | 2013 |
| Resistive switching properties in oxygen-deficient junctions with active Al top electrodes SL Li, DS Shang, J Li, JL Gang, DN Zheng Journal of Applied Physics 105 (3), 033710, 2009 | 76 | 2009 |
| A nanomesh scaffold for supramolecular nanowire optoelectronic devices L Zhang, X Zhong, E Pavlica, S Li, A Klekachev, G Bratina, TW Ebbesen, ... Nature nanotechnology 11 (10), 900, 2016 | 72 | 2016 |
| Suppression of thermally activated carrier transport in atomically thin MoS 2 on crystalline hexagonal boron nitride substrates MY Chan, K Komatsu, SL Li, Y Xu, P Darmawan, H Kuramochi, ... Nanoscale 5 (20), 9572-9576, 2013 | 72 | 2013 |
Kazuhito TsukagoshiWPI-MANA, National Institute for Materials Science (NIMS)Verified email at nims.go.jp
