| A patterned single layer graphene resistance temperature sensor B Davaji, HD Cho, M Malakoutian, JK Lee, G Panin, TW Kang, CH Lee Scientific reports 7 (1), 8811, 2017 | 163 | 2017 |
| Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling M Malakoutian, DE Field, NJ Hines, S Pasayat, S Graham, M Kuball, ... ACS Applied Materials & Interfaces 13 (50), 60553-60560, 2021 | 66 | 2021 |
| Polycrystalline diamond growth on β-Ga2O3 for thermal management M Malakoutian, Y Song, C Yuan, C Ren, JS Lundh, RM Lavelle, JE Brown, ... Applied Physics Express 14 (5), 055502, 2021 | 48 | 2021 |
| A Label-Free detection of biomolecules using micromechanical biosensors M Omidi, MA Malakoutian, M Choolaei, F Oroojalian, F Haghiralsadat, ... Chinese Physics Letters 30 (6), 068701, 2013 | 38 | 2013 |
| Development of polycrystalline diamond compatible with the latest N-polar GaN mm-wave technology M Malakoutian, C Ren, K Woo, H Li, S Chowdhury Crystal Growth & Design 21 (5), 2624-2632, 2021 | 36 | 2021 |
| A 4.5 μm PIN diamond diode for detecting slow neutrons J Holmes, M Dutta, FA Koeck, M Benipal, J Brown, B Fox, R Hathwar, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018 | 36 | 2018 |
| Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers D Shoemaker, M Malakoutian, B Chatterjee, Y Song, S Kim, BM Foley, ... IEEE Transactions on Components, Packaging and Manufacturing Technology 11 …, 2021 | 33 | 2021 |
| Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond R Peterson, M Malakoutian, X Xu, C Chapin, S Chowdhury, DG Senesky Physical Review B 102 (7), 075303, 2020 | 30 | 2020 |
| A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN M Malakoutian, MA Laurent, S Chowdhury Crystals 9 (10), 498, 2019 | 27 | 2019 |
| Schottky barrier height analysis of diamond SPIND using high temperature operation up to 873 K M Malakoutian, M Benipal, FA Koeck, RJ Nemanich, S Chowdhury IEEE Journal of the Electron Devices Society 8, 614-618, 2020 | 25 | 2020 |
| Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices M Malakoutian, X Zheng, K Woo, R Soman, A Kasperovich, J Pomeroy, ... Advanced Functional Materials 32 (47), 2208997, 2022 | 21 | 2022 |
| A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN MA Laurent, M Malakoutian, S Chowdhury Semiconductor Science and Technology 35 (1), 015003, 2019 | 18 | 2019 |
| Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling R Soman, M Malakoutian, B Shankar, D Field, E Akso, N Hatui, NJ Hines, ... 2022 International Electron Devices Meeting (IEDM), 30.8. 1-30.8. 4, 2022 | 12 | 2022 |
| Demonstration of monolithic polycrystalline diamond-GaN complementary FET technology for high-temperature applications C Ren, M Malakoutian, S Li, B Ercan, S Chowdhury ACS Applied Electronic Materials 3 (10), 4418-4423, 2021 | 11 | 2021 |
| A study on sub-bandgap photoexcitation in nitrogen-and boron-doped diamond with interdigitated device structure K Woo, M Malakoutian, BA Reeves, S Chowdhury Applied Physics Letters 120 (11), 2022 | 10 | 2022 |
| Vibrational and sonochemical characterization of ultrasonic endodontic activating devices for translation to clinical efficacy E Dashtimoghadam, A Johnson, F Fahimipour, M Malakoutian, J Vargas, ... Materials Science and Engineering: C 109, 110646, 2020 | 9 | 2020 |
| Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs X Zhou, M Malakoutian, R Soman, Z Bian, RP Martinez, S Chowdhury IEEE Transactions on Electron Devices 69 (12), 6650-6655, 2022 | 7 | 2022 |
| Hydrogen-Terminated diamond FET and GaN HEMT delivering CMOS Inverter Operation at High-Temperature C Ren, M Malakoutian, S Li, S Chowdhury | 7 | 2020 |
| Device simulation of a novel strained silicon channel RF LDMOS V Fathipour, S Fathipour, M Fathipour, MA Malakootian Microelectronic engineering 94, 29-32, 2012 | 7 | 2012 |
| The impact of process parameter variations on the electrical characteristics of a RESURF LDMOS and its compact modeling V Fathipour, A Mojab, MA Malakoutian, S Fathipour, M Fathipour 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 7 | 2011 |
Srabanti ChowdhuryStanford UniversityVerified email at stanford.edu
