| Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ... IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010 | 79 | 2010 |
| Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013 | 77 | 2013 |
| Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ... IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009 | 76 | 2009 |
| Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011 | 66 | 2011 |
| Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ... IEEE transactions on nuclear science 58 (6), 2961-2967, 2011 | 66 | 2011 |
| Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011 | 63 | 2011 |
| Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015 | 54 | 2015 |
| Ozone-exposure and annealing effects on graphene-on-SiO2 transistors EX Zhang, AKM Newaz, B Wang, CX Zhang, DM Fleetwood, KI Bolotin, ... Applied physics letters 101 (12), 121601, 2012 | 52 | 2012 |
| Effect of transistor density and charge sharing on single-event transients in 90-nm bulk CMOS NM Atkinson, JR Ahlbin, AF Witulski, NJ Gaspard, WT Holman, BL Bhuva, ... IEEE Transactions on Nuclear Science 58 (6), 2578-2584, 2011 | 51 | 2011 |
| Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ... Applied Physics Letters 103 (4), 042102, 2013 | 50 | 2013 |
| Effectiveness of SEL hardening strategies and the latchup domino effect NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ... IEEE Transactions on Nuclear Science 59 (6), 2642-2650, 2012 | 50 | 2012 |
| Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017 | 46 | 2017 |
| Heavy-ion-induced current transients in bulk and SOI FinFETs F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ... IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012 | 45 | 2012 |
| The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013 | 43 | 2013 |
| Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 203501, 2011 | 42 | 2011 |
| Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014 | 40 | 2014 |
| Single- and Multiple-Event Induced Upsets in 1T1R RRAM WG Bennett, NC Hooten, RD Schrimpf, RA Reed, MH Mendenhall, ... IEEE Transactions on Nuclear Science 61 (4), 1717-1725, 2014 | 39 | 2014 |
| Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4074-4079, 2013 | 39 | 2013 |
| Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing WB Yi, EX Zhang, M Chen, N Li, GQ Zhang, ZL Liu, X Wang Semiconductor science and technology 19 (5), 571, 2004 | 39 | 2004 |
| Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ... IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015 | 38 | 2015 |
