| Ballistic transport in Schottky barrier carbon nanotube FETs MI Ossaimee, SH Gamal, KA Kirah, OA Omar Electronics Letters 44 (5), 336-337, 2008 | 30 | 2008 |
| Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs M Ossaimee, S Gamal, A Shaker Electronics Letters 51 (6), 503-504, 2015 | 24 | 2015 |
| Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET A Shaker, M Ossaimee, A Zekry, M Abouelatta Superlattices and Microstructures 86, 518-530, 2015 | 23 | 2015 |
| Impact of high-doped pockets on the performance of tunneling CNTFET A Salah, M Ossaimee, A Shaker Superlattices and Microstructures 145, 106622, 2020 | 13 | 2020 |
| A comprehensive semi-analytical model of the polysilicon emitter contact in bipolar transistors A Zekry, A Shaker, M Ossaimee, MS Salem, M Abouelatta Journal of Computational Electronics 17, 246-255, 2018 | 8 | 2018 |
| Temperature dependence of carrier transport and electrical characteristics of Schottky‐barrier carbon nanotube field effect transistors M Ossaimee, M El Sabbagh, S Gamal Micro & Nano Letters 11 (2), 114-117, 2016 | 8 | 2016 |
| Full electrothermal physically-based modeling of the power diode using PSPICE A Shaker, M Abouelatta, M El-Banna, M Ossaimee, A Zekry Solid-State Electronics 116, 70-79, 2016 | 8 | 2016 |
| Electrical characteristics of T-CNTFET: partially-gated channel vs doping engineering N Salem, M Ossaimee, A Shaker, M Abouelatta Ecs Journal of Solid State Science and Technology 7 (3), M23, 2018 | 7 | 2018 |
| Scaling Issues for pin carbon nanotube FETs: a computational study M Ossaimee, S Gamal 2010 International Conference on Microelectronics, 240-243, 2010 | 7 | 2010 |
| Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operation A Shaker, M Ossaimee Semiconductor Science and Technology 33 (3), 035012, 2018 | 6 | 2018 |
| Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance A Shaker, M Ossaimee, A Zekry Superlattices and Microstructures 96, 179-190, 2016 | 6 | 2016 |
| Performance and electrical characteristics of hybrid carbon nanotube field effect transistors M Ossaimee, A Shaker Micro & Nano Letters 11 (9), 476-479, 2016 | 5 | 2016 |
| Enhancement of Tunneling CNTFET Performance Using a High-k Dielectric Pocket M Ossaimee, N Salem, M Abouelatta, A Shaker ECS Journal of Solid State Science and Technology 9 (10), 101002, 2020 | 4 | 2020 |
| Simplified quantitative stress-induced leakage current (SILC) model for MOS devices M Ossaimee, K Kirah, W Fikry, A Girgis, OA Omar Microelectronics Reliability 46 (2-4), 287-292, 2006 | 4 | 2006 |
| Dielectric modulated CNT TFET based label-free biosensor: design and performance analysis A Salah, A Shaker, M Ossaimee Semiconductor Science and Technology 36 (9), 095032, 2021 | 3 | 2021 |
| Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance A Salah, A Shaker, M El-Banna, M Ossaimee Semiconductor Science and Technology 36 (7), 075012, 2021 | 3 | 2021 |
| Performance of standard and double‐sided 3D‐radiation detectors under the impact of a temperature pulse M Abouelatta, A Shaker, C Gontrand, M Ossaimee Electronics Letters 51 (21), 1668-1670, 2015 | 3 | 2015 |
| Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET A Salah, M El Banna, A Shaker, M Ossaimee Alexandria Engineering Journal 64, 131-139, 2023 | 2 | 2023 |
| A simple treatment of quantum dissipative transport in carbon nanotube transistors M Ossaimee, SH Gamal International Journal of Nanomanufacturing 4 (1-4), 283-289, 2009 | 2 | 2009 |
| Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering M Ossaimee, A Salah, SH Gamal, A Shaker, MS Salem Ain Shams Engineering Journal 14 (2), 101848, 2023 | 1 | 2023 |
