Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92, 232112, 2008
466 2008 Hybrid 8-bit floating point (HFP8) training and inference for deep neural networks X Sun, J Choi, CY Chen, N Wang, S Venkataramani, VV Srinivasan, X Cui, ...
Advances in neural information processing systems 32, 2019
208 2019 Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor Science and Technology 23, 075019, 2008
170 2008 Ultra-low precision 4-bit training of deep neural networks X Sun, N Wang, CY Chen, J Ni, A Agrawal, X Cui, S Venkataramani, ...
Advances in Neural Information Processing Systems 33, 1796-1807, 2020
144 2020 Resistive Switching in X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma
Electron Device Letters, IEEE 30 (4), 334-336, 2009
130 2009 Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma
Applied Physics Letters 112 (26), 2018
98 2018 Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma
Applied Physics Letters 102 (10), 2013
92 2013 DLFloat: A 16-b floating point format designed for deep learning training and inference A Agrawal, SM Mueller, BM Fleischer, X Sun, N Wang, J Choi, ...
2019 IEEE 26th Symposium on Computer Arithmetic (ARITH), 92-95, 2019
87 2019 Circuitry for ferroelectric FET-based dynamic random access memory and non-volatile memory X Sun, TP Ma
US Patent 10,127,964, 2018
86 2018 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, G Brammertz, M Caymax, G Groeseneken, TY Hoffmann, D Lin, ...
Proceedings of the International Symposium on Technology Evolution for …, 2010
82 2010 9.1 A 7nm 4-core AI chip with 25.6 TFLOPS hybrid FP8 training, 102.4 TOPS INT4 inference and workload-aware throttling A Agrawal, SK Lee, J Silberman, M Ziegler, M Kang, S Venkataramani, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 144-146, 2021
71 2021 Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
Nuclear Science, IEEE Transactions on 60 (6), 4074-4079, 2013
69 2013 RaPiD: AI accelerator for ultra-low precision training and inference S Venkataramani, V Srinivasan, W Wang, S Sen, J Zhang, A Agrawal, ...
2021 ACM/IEEE 48th Annual International Symposium on Computer Architecture …, 2021
68 2021 Scalecom: Scalable sparsified gradient compression for communication-efficient distributed training CY Chen, J Ni, S Lu, X Cui, PY Chen, X Sun, N Wang, S Venkataramani, ...
Advances in Neural Information Processing Systems 33, 13551-13563, 2020
63 2020 GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ...
Journal of Applied Physics 109, 073719, 2011
56 2011 Efficient AI system design with cross-layer approximate computing S Venkataramani, X Sun, N Wang, CY Chen, J Choi, M Kang, A Agarwal, ...
Proceedings of the IEEE 108 (12), 2232-2250, 2020
50 2020 Capacitor-based cross-point array for analog neural network with record symmetry and linearity Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ...
2018 IEEE Symposium on VLSI Technology, 25-26, 2018
49 2018 Three-dimensional ferroelectric FET-based structures X Sun, TP Ma
US Patent 9,818,848, 2017
46 2017 A 3.0 TFLOPS 0.62 V scalable processor core for high compute utilization AI training and inference J Oh, SK Lee, M Kang, M Ziegler, J Silberman, A Agrawal, ...
2020 IEEE Symposium on VLSI Circuits, 1-2, 2020
41 2020 Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ...
Applied Physics Letters 98, 192110, 2011
40 2011 
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