| Silicon-germanium heterojunction bipolar transistors JD Cressler, G Niu Artech house, 2003 | 652 | 2003 |
| SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications JD Cressler IEEE Transactions on Microwave Theory and techniques 46 (5), 572-589, 1998 | 562 | 1998 |
| Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits DL Harame, JH Comfort, JD Cressler, EF Crabbe, JYC Sun, BS Meyerson, ... IEEE Transactions on Electron Devices 42 (3), 455-468, 1995 | 525 | 1995 |
| Si/SiGe epitaxial-base transistors. II. Process integration and analog applications DL Harame, JH Comfort, JD Cressler, EF Crabbe, JYC Sun, BS Meyerson, ... IEEE Transactions on Electron Devices 42 (3), 469-482, 1995 | 274 | 1995 |
| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler CRC press, 2018 | 260 | 2018 |
| On the potential of SiGe HBTs for extreme environment electronics JD Cressler Proceedings of the IEEE 93 (9), 1559-1582, 2005 | 249 | 2005 |
| Extreme environment electronics JD Cressler, HA Mantooth CRC Press, 2017 | 225 | 2017 |
| Record maximum oscillation frequency in C-face epitaxial graphene transistors Z Guo, R Dong, PS Chakraborty, N Lourenco, J Palmer, Y Hu, M Ruan, ... Nano letters 13 (3), 942-947, 2013 | 175 | 2013 |
| Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end R Mukhopadhyay, Y Park, P Sen, N Srirattana, J Lee, CH Lee, S Nuttinck, ... IEEE Transactions on Microwave Theory and Techniques 53 (1), 81-93, 2005 | 169 | 2005 |
| IEEE International Electron Devices Meeting CH Lee, KI Choi, MK Cho, YH Song, KC Park, K Kim IEDM Technical Digest (Washington, DC 2003 Dec. 8-10) p 22 (1), 2008 | 137* | 2008 |
| Half-terahertz operation of SiGe HBTs R Krithivasan, Y Lu, JD Cressler, JS Rieh, MH Khater, D Ahlgren, ... IEEE electron device letters 27 (7), 567-569, 2006 | 134 | 2006 |
| A new" mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors G Zhang, JD Cressler, G Niu, AJ Joseph IEEE Transactions on Electron Devices 49 (12), 2151-2156, 2002 | 131 | 2002 |
| Radiation effects in SiGe technology JD Cressler IEEE transactions on Nuclear Science 60 (3), 1992-2014, 2013 | 124 | 2013 |
| On the profile design and optimization of epitaxial Si-and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations JD Cressler, JH Comfort, EF Crabbe, GL Patton, JMC Stork, JYC Sun, ... IEEE Transactions on Electron Devices 40 (3), 525-541, 1993 | 124 | 1993 |
| Multiple-bit upset in 130 nm CMOS technology AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ... IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006 | 123 | 2006 |
| Design and fabrication of planar guard ring termination for high-voltage SiC diodes DC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC Tin Solid-State Electronics 44 (8), 1367-1372, 2000 | 117 | 2000 |
| A unified approach to RF and microwave noise parameter modeling in bipolar transistors G Niu, JD Cressler, S Zhang, WE Ansley, CS Webster, DL Harame IEEE Transactions on Electron Devices 48 (11), 2568-2574, 2001 | 115 | 2001 |
| RF linearity characteristics of SiGe HBTs G Niu, Q Liang, JD Cressler, CS Webster, DL Harame IEEE Transactions on Microwave Theory and Techniques 49 (9), 1558-1565, 2001 | 101 | 2001 |
| A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology G Niu, JD Cressler, SJ Mathew, S Subbanna IEEE Transactions on Electron Devices 46 (9), 1912-1914, 1999 | 101 | 1999 |
| Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST) P Marshall, M Carts, S Currie, R Reed, B Randall, K Fritz, K Kennedy, ... IEEE transactions on nuclear science 52 (6), 2446-2454, 2005 | 99 | 2005 |
