متابعة
David B. Eason
David B. Eason
بريد إلكتروني تم التحقق منه على buffalo.edu
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
DC Look, DC Reynolds, CW Litton, RL Jones, DB Eason, G Cantwell
Applied physics letters 81 (10), 1830-1832, 2002
16672002
Production of nitrogen acceptors in ZnO by thermal annealing
NY Garces, NC Giles, LE Halliburton, G Cantwell, DB Eason, ...
Applied physics letters 80 (8), 1334-1336, 2002
2422002
Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal
SF Chichibu, T Sota, G Cantwell, DB Eason, CW Litton
Journal of applied physics 93 (1), 756-758, 2003
1632003
High‐brightness blue and green light‐emitting diodes
DB Eason, Z Yu, WC Hughes, WH Roland, C Boney, JW Cook Jr, ...
Applied physics letters 66 (2), 115-117, 1995
1411995
Molecular nitrogen (N2−) acceptors and isolated nitrogen (N−) acceptors in ZnO crystals
NY Garces, L Wang, NC Giles, LE Halliburton, G Cantwell, DB Eason
Journal of applied physics 94 (1), 519-524, 2003
1022003
Brillouin scattering study of ZnO
T Azuhata, M Takesada, T Yagi, A Shikanai, SF Chichibu, K Torii, ...
Journal of applied physics 94 (2), 968-972, 2003
932003
Femtosecond coherent spectroscopy of bulk ZnSe and ZnCdSe/ZnSe quantum wells
AJ Fischer, DS Kim, J Hays, W Shan, JJ Song, DB Eason, J Ren, ...
Physical review letters 73 (17), 2368, 1994
841994
Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
HE Cantwell, DB Eason
US Patent 6,624,441, 2003
552003
Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
HE Cantwell, DB Eason
US Patent 6,624,441, 2003
552003
Molecular‐beam epitaxy of ZnS using an elemental S source
JW Cook Jr, DB Eason, RP Vaudo, JF Schetzina
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
531992
Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy
DB Bae,Che Jin, McMahon, Jonathan, Detz, Hermann, Strasser, Gottfried, Park ...
AIP Advances 7 (3), 035113, doi: http://dx.doi.org/10.1063/1, 2017
362017
Strong biexcitonic effects and exciton-exciton correlations in ZnO
K Hazu, T Sota, K Suzuki, S Adachi, SF Chichibu, G Cantwell, DB Eason, ...
Physical Review B 68 (3), 033205, 2003
352003
Covalent 2D Cr2Te3 ferromagnet
M Bian, AN Kamenskii, M Han, W Li, S Wei, X Tian, DB Eason, F Sun, ...
Materials Research Letters 9 (5), 205-212, 2021
332021
Quantum dot infrared photodetectors: photoresponse enhancement due to potential barriers
V Mitin, A Antipov, A Sergeev, N Vagidov, D Eason, G Strasser
Nanoscale Res Lett 6 (1), 1-6, 2011
332011
Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates
D Eason, J Ren, Z Yu, C Hughes, JW Cook Jr, JF Schetzina, NA El-Masry, ...
Journal of crystal growth 150, 718-724, 1995
261995
Integrated heterostructure devices composed of II–VI materials with Hg-based contact layers
J Ren, DB Eason, LE Churchill, Z Yu, C Boney, JW Cook Jr, JF Schetzina, ...
Journal of crystal growth 138 (1-4), 455-463, 1994
251994
Light emission from quantum well structures containing ZnS, ZnSe, and related alloys
Z Yu, J Ren, Y Lansari, B Sneed, KA Bowers, C Boney, DB Eason, ...
Japanese journal of applied physics 32 (1S), 663, 1993
231993
High-brightness green light-emitting diodes
DB Eason, WC Hughes, J Ren, M Riegner, Z Yu, JW Cook, JF Schetzina, ...
Electronics Letters 30 (14), 1178-1180, 1994
211994
Ultraviolet quantum well structures based on ZnS/ZnS1−xSex and ZnS/Zn1−xCdxS multilayers grown by molecular‐beam epitaxy
RP Vaudo, DB Eason, KA Bowers, KJ Gossett, JW Cook Jr, JF Schetzina
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
211993
High‐brightness light‐emitting diodes grown by molecular beam epitaxy on ZnSe substrates
DB Eason, Z Yu, WC Hughes, C Boney, JW Cook Jr, JF Schetzina, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
191995
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مقالات 1–20