Massimo Longo
Massimo Longo
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Thermal characterization of the interface from room temperature up to
JL Battaglia, A Kusiak, V Schick, A Cappella, C Wiemer, M Longo, ...
Journal of Applied Physics 107 (4), 044314, 2010
Novel near-infrared emission from crystal defects in MoS2 multilayer flakes
F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, ...
Nature communications 7 (1), 13044, 2016
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films
S Vangelista, E Cinquanta, C Martella, M Alia, M Longo, A Lamperti, ...
Nanotechnology 27 (17), 175703, 2016
Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
A Passaseo, R Rinaldi, M Longo, S Antonaci, AL Convertino, R Cingolani, ...
Journal of Applied Physics 89 (8), 4341-4348, 2001
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system
H Hardtdegen, M Mikulics, S Riess, M Schuck, T Saltzmann, U Simon, ...
Progress in crystal growth and characterization of materials 61 (2-4), 27-45, 2015
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
C Martella, P Melloni, E Cinquanta, E Cianci, M Alia, M Longo, A Lamperti, ...
Advanced Electronic Materials 2 (10), 1600330, 2016
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
R Fallica, E Varesi, L Fumagalli, S Spadoni, M Longo, C Wiemer
physica status solidi (RRL)–Rapid Research Letters 7 (12), 1107-1111, 2013
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies
N Lovergine, M Longo, P Prete, C Gerardi, L Calcagnile, R Cingolani, ...
Journal of applied physics 81 (2), 685-692, 1997
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires
M Longo, R Fallica, C Wiemer, O Salicio, M Fanciulli, E Rotunno, ...
Nano letters 12 (3), 1509-1515, 2012
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
M Longo, R Magnanini, A Parisini, L Tarricone, A Carbognani, C Bocchi, ...
Journal of crystal growth 248, 119-123, 2003
Chemical vapor deposition of chalcogenide materials for phase-change memories
A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, M Longo, ...
Microelectronic Engineering 85 (12), 2338-2341, 2008
Thermal conductivity measurement of a Sb2Te3 phase change nanowire
A Saci, JL Battaglia, A Kusiak, R Fallica, M Longo
Applied Physics Letters 104 (26), 263103, 2014
Au-catalyzed self assembly of GeTe nanowires by MOCVD
M Longo, C Wiemer, O Salicio, M Fanciulli, L Lazzarini, E Rotunno
Journal of crystal growth 315 (1), 152-156, 2011
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metalorganic vapor phase epitaxy
G Leo, M Longo, N Lovergine, AM Mancini, L Vasanelli, AV Drigo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Crystal structure assessment of Ge–Sb–Te phase change nanowires
E Rotunno, L Lazzarini, M Longo, V Grillo
Nanoscale 5 (4), 1557-1563, 2013
Ultraviolet optical near-fields of microspheres imprinted in phase change films
J Siegel, D Puerto, J Solis, FJ García de Abajo, CN Afonso, M Longo, ...
Applied physics letters 96 (19), 193108, 2010
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, ...
Journal of Crystal Growth 310 (23), 5053-5057, 2008
Determination of the valence band offset of MOVPE-grown multiple quantum wells by admittance spectroscopy
C Ghezzi, R Magnanini, A Parisini, L Tarricone, E Gombia, M Longo
Physical Review B 77 (12), 125317, 2008
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching
C Canevali, M Alia, M Fanciulli, M Longo, R Ruffo, CM Mari
Surface and Coatings Technology 280, 37-42, 2015
Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon
E Longo, M Belli, M Alia, M Rimoldi, R Cecchini, M Longo, C Wiemer, ...
Advanced Functional Materials 32 (4), 2109361, 2022
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