| Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 C JL Battaglia, A Kusiak, V Schick, A Cappella, C Wiemer, M Longo, ... Journal of Applied Physics 107 (4), 2010 | 103 | 2010 |
| Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films S Vangelista, E Cinquanta, C Martella, M Alia, M Longo, A Lamperti, ... Nanotechnology 27 (17), 175703, 2016 | 72 | 2016 |
| Novel near-infrared emission from crystal defects in MoS2 multilayer flakes F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, ... Nature communications 7 (1), 13044, 2016 | 71 | 2016 |
| Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system H Hardtdegen, M Mikulics, S Riess, M Schuck, T Saltzmann, U Simon, ... Progress in crystal growth and characterization of materials 61 (2-4), 27-45, 2015 | 53 | 2015 |
| Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm A Passaseo, R Rinaldi, M Longo, S Antonaci, AL Convertino, R Cingolani, ... Journal of Applied Physics 89 (8), 4341-4348, 2001 | 51 | 2001 |
| Engineering the growth of MoS2 via atomic layer deposition of molybdenum oxide film precursor C Martella, P Melloni, E Cinquanta, E Cianci, M Alia, M Longo, A Lamperti, ... Adv. Electron. Mater 2 (10), 1600330, 2016 | 48 | 2016 |
| Effect of nitrogen doping on the thermal conductivity of GeTe thin films R Fallica, E Varesi, L Fumagalli, S Spadoni, M Longo, C Wiemer physica status solidi (RRL)–Rapid Research Letters 7 (12), 1107-1111, 2013 | 47 | 2013 |
| Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires M Longo, R Fallica, C Wiemer, O Salicio, M Fanciulli, E Rotunno, ... Nano letters 12 (3), 1509-1515, 2012 | 42 | 2012 |
| Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs M Longo, R Magnanini, A Parisini, L Tarricone, A Carbognani, C Bocchi, ... Journal of crystal growth 248, 119-123, 2003 | 37 | 2003 |
| Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies N Lovergine, M Longo, P Prete, C Gerardi, L Calcagnile, R Cingolani, ... Journal of applied physics 81 (2), 685-692, 1997 | 36 | 1997 |
| Thermal conductivity measurement of a Sb2Te3 phase change nanowire A Saci, JL Battaglia, A Kusiak, R Fallica, M Longo Applied Physics Letters 104 (26), 2014 | 31 | 2014 |
| Au-catalyzed self assembly of GeTe nanowires by MOCVD M Longo, C Wiemer, O Salicio, M Fanciulli, L Lazzarini, E Rotunno Journal of crystal growth 315 (1), 152-156, 2011 | 30 | 2011 |
| Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon E Longo, M Belli, M Alia, M Rimoldi, R Cecchini, M Longo, C Wiemer, ... Advanced Functional Materials 32 (4), 2109361, 2022 | 29 | 2022 |
| Chemical vapor deposition of chalcogenide materials for phase-change memories A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, M Longo, ... Microelectronic Engineering 85 (12), 2338-2341, 2008 | 28 | 2008 |
| Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching C Canevali, M Alia, M Fanciulli, M Longo, R Ruffo, CM Mari Surface and Coatings Technology 280, 37-42, 2015 | 26 | 2015 |
| Crystal structure assessment of Ge–Sb–Te phase change nanowires E Rotunno, L Lazzarini, M Longo, V Grillo Nanoscale 5 (4), 1557-1563, 2013 | 26 | 2013 |
| Ultraviolet optical near-fields of microspheres imprinted in phase change films J Siegel, D Puerto, J Solis, FJ García de Abajo, CN Afonso, M Longo, ... Applied Physics Letters 96 (19), 2010 | 25 | 2010 |
| Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, ... Journal of Crystal Growth 310 (23), 5053-5057, 2008 | 25 | 2008 |
| Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metalorganic vapor phase epitaxy G Leo, M Longo, N Lovergine, AM Mancini, L Vasanelli, AV Drigo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 25 | 1996 |
| Determination of the valence band offset of MOVPE-grown multiple quantum wells by admittance spectroscopy C Ghezzi, R Magnanini, A Parisini, L Tarricone, E Gombia, M Longo Physical Review B 77 (12), 125317, 2008 | 23 | 2008 |
Claudia WiemerEPFL, Stanford University, INFM, MDM, CNRVerified email at mdm.imm.cnr.it
