| Observation of native Ga vacancies in GaN by positron annihilation K Saarinen, T Laine, S Kuisma, J Nissilä, P Hautojärvi, L Dobrzynski, ... MRS Online Proceedings Library (OPL) 482, 757, 1997 | 623 | 1997 |
| Lattice parameters of gallium nitride M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ... Applied Physics Letters 69 (1), 73-75, 1996 | 549 | 1996 |
| Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995 | 428 | 1995 |
| Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films K Kornitzer, T Ebner, K Thonke, R Sauer, C Kirchner, V Schwegler, ... Physical Review B 60 (3), 1471, 1999 | 310 | 1999 |
| Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994 | 293 | 1994 |
| Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995 | 282 | 1995 |
| Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering T Ruf, J Serrano, M Cardona, P Pavone, M Pabst, M Krisch, M D'astuto, ... Physical review letters 86 (5), 906, 2001 | 245 | 2001 |
| Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal R Nowak, M Pessa, M Suganuma, M Leszczynski, I Grzegory, S Porowski, ... Applied physics letters 75 (14), 2070-2072, 1999 | 200 | 1999 |
| Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers J Oila, V Ranki, J Kivioja, K Saarinen, P Hautojärvi, J Likonen, ... Physical Review B 63 (4), 045205, 2001 | 140 | 2001 |
| Visible light communications using a directly modulated 422 nm GaN laser diode S Watson, M Tan, SP Najda, P Perlin, M Leszczynski, G Targowski, ... Optics letters 38 (19), 3792-3794, 2013 | 137 | 2013 |
| Lattice constants, thermal expansion and compressibility of gallium nitride M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ... Journal of Physics D: Applied Physics 28 (4A), A149, 1995 | 108 | 1995 |
| GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates M Asif Khan, JW Yang, W Knap, E Frayssinet, X Hu, G Simin, P Prystawko, ... Applied Physics Letters 76 (25), 3807-3809, 2000 | 103 | 2000 |
| Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ... Applied physics letters 88 (20), 2006 | 100 | 2006 |
| Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy C Skierbiszewski, ZR Wasilewski, M Siekacz, A Feduniewicz, P Perlin, ... Applied Physics Letters 86 (1), 2005 | 98 | 2005 |
| Evidence for localized Si-donor state and its metastable properties in AlGaN C Skierbiszewski, T Suski, M Leszczynski, M Shin, M Skowronski, ... Applied physics letters 74 (25), 3833-3835, 1999 | 91 | 1999 |
| Method of fabrication of highly resistive GaN bulk crystals S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ... US Patent 6,273,948, 2001 | 87 | 2001 |
| The microstructure of gallium nitride monocrystals grown at high pressure M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ... Journal of crystal growth 169 (2), 235-242, 1996 | 81 | 1996 |
| 60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy C Skierbiszewski, P Wiśniewski, M Siekacz, P Perlin, ... Applied Physics Letters 88 (22), 2006 | 75 | 2006 |
| Critical issues for interfaces to p-type SiC and GaN in power devices F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ... Applied Surface Science 258 (21), 8324-8333, 2012 | 73 | 2012 |
| Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte Journal of applied physics 110 (12), 2011 | 72 | 2011 |
Piotr PerlinInstitute of High Pressure Physicsبريد إلكتروني تم التحقق منه على unipress.waw.pl
