Superresolution Microscopy of Single Rare-Earth Emitters in YAG and Centers in Diamond R Kolesov, S Lasse, C Rothfuchs, AD Wieck, K Xia, T Kornher, ... Physical Review Letters 120 (3), 033903, 2018 | 20 | 2018 |
Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir AR Korsch, GN Nguyen, M Schmidt, C Ebler, SR Valentin, P Lochner, ... Physical Review B 99 (16), 165303, 2019 | 9 | 2019 |
Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots C Rothfuchs, N Kukharchyk, T Koppe, F Semond, S Blumenthal, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 5 | 2016 |
Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation C Rothfuchs, N Kukharchyk, MK Greff, AD Wieck, A Ludwig Applied Physics B 122, 1-6, 2016 | 5 | 2016 |
Modification of InAs and GaN quantum dots by ion beam implantation C Rothfuchs | 1 | 2017 |
Ion-induced interdiffusion of surface GaN quantum dots C Rothfuchs, F Semond, M Portail, O Tottereau, A Courville, AD Wieck, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 1 | 2017 |
Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building Blocks T Koppe, C Rothfuchs, M Schulte-Borchers, H Hofsäss, H Boudinov, ... Journal of microelectromechanical systems 23 (4), 955-960, 2014 | 1 | 2014 |