| Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes ZA Jian, S Mohanty, E Ahmadi Applied Physics Letters 116 (15), 2020 | 51 | 2020 |
| An epitaxial ferroelectric ScAlN/GaN heterostructure memory D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi Advanced Electronic Materials 8 (9), 2200005, 2022 | 50 | 2022 |
| N-polar ScAlN and HEMTs grown by molecular beam epitaxy P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ... Applied Physics Letters 119 (8), 2021 | 39 | 2021 |
| Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular … S Diez, S Mohanty, C Kurdak, E Ahmadi Applied Physics Letters 117 (4), 2020 | 28 | 2020 |
| Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs ZA Jian, S Mohanty, E Ahmadi Applied Physics Letters 116 (24), 2020 | 19 | 2020 |
| Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions S Mohanty, I Sayed, ZA Jian, U Mishra, E Ahmadi Applied Physics Letters 119 (4), 2021 | 13 | 2021 |
| Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) ZA Jian, I Sayed, W Liu, S Mohanty, E Ahmadi Applied Physics Letters 118 (17), 2021 | 13 | 2021 |
| Switching Performance Analysis of 3.5 kV Ga2O3 Power FinFETs ZA Jian, S Mohanty, E Ahmadi IEEE Transactions on Electron Devices 68 (2), 672-678, 2020 | 13 | 2020 |
| Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN S Mondal, D Wang, P Wang, Y Wu, M Hu, Y Xiao, S Mohanty, T Ma, ... APL Materials 10 (12), 2022 | 12 | 2022 |
| N-polar GaN: Epitaxy, properties, and device applications S Mohanty, K Khan, E Ahmadi Progress in Quantum Electronics 87, 100450, 2023 | 11 | 2023 |
| HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures CJ Clymore, S Mohanty, ZA Jian, A Krishna, S Keller, E Ahmadi Semiconductor Science and Technology 36 (3), 035017, 2021 | 10 | 2021 |
| Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel S Mohanty, S Diez, ZA Jian, E Ahmadi Journal of Applied Physics 128 (23), 2020 | 7 | 2020 |
| Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing ZA Jian, I Sayed, S Mohanty, W Liu, E Ahmadi Semiconductor Science and Technology 36 (9), 09LT03, 2021 | 6 | 2021 |
| Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric S Mohanty, Z Jian, K Khan, E Ahmadi Journal of Electronic Materials 52 (4), 2596-2602, 2023 | 4 | 2023 |
| N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO as Gate Insulator O Odabasi, S Mohanty, K Khan, E Ahmadi IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| N-Polar GaN Deep Recess HEMTs with ALD HfO2 as Gate Dielectric EA Oguz Odabasi, Subhajit Mohanty, Kamruzzaman Khan 65th Electronic Materials Conference 2023 (EMC 2023), 2023 | | 2023 |
| Effect of HfO2 Dielectric Thickness on the DC-RF Dispersion in N-Polar GaN HEMTs EA Subhajit Mohanty, Zhe (Ashley) Jian, Oguz Odabasi, Md Irfan, Kamruzzaman Khan 65th Electronic Materials Conference 2023 (EMC 2023), 2023 | | 2023 |
| N-polar GaN HEMT with HfO2 as Gate Dielectric for mm-wave Applications S Mohanty | | 2023 |
| A Systematic Study Of Interfacial Property Of HfO2 Dielectric On N-polar GaN Subhajit Mohanty, Islam Sayed, Zhe (Ashley) Jian, Umesh Mishra, Elaheh Ahmadi Compound Semiconductor Week (CSW) 2021, 2021 | | 2021 |
| A Systematic Study Of Interfacial Property Of HfO2 Dielectric On N-polar GaN Subhajit Mohanty, Islam Sayed, Zhe (Ashley) Jian, Umesh Mishra, Elaheh Ahmadi 79th Device Research Conference (DRC) 2021, 2021 | | 2021 |
Elaheh AhmadiAssociate Professor, University of California Los AngelesVerified email at umich.edu
