متابعة
Neeraj Nepal
Neeraj Nepal
US Naval Research Laboratory
بريد إلكتروني تم التحقق منه على nrl.navy.mil
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Temperature and compositional dependence of the energy band gap of AlGaN alloys‏
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang‏
Applied Physics Letters 87 (24), 2005‏
2182005
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys‏
ML Nakarmi, N Nepal, JY Lin, HX Jiang‏
Applied Physics Letters 94 (9), 2009‏
2102009
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3‏
MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster‏
ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019‏
1982019
Photoluminescence studies of impurity transitions in AlGaN alloys‏
N Nepal, ML Nakarmi, JY Lin, HX Jiang‏
Applied physics letters 89 (9), 2006‏
1722006
Correlation between optical and electrical properties of Mg-doped AlN epilayers‏
ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang‏
Applied physics letters 89 (15), 2006‏
1642006
Correlation between optoelectronic and structural properties and epilayer thickness of AlN‏
BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ...‏
Applied Physics Letters 90 (24), 2007‏
1632007
GaN/NbN epitaxial semiconductor/superconductor heterostructures‏
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...‏
Nature 555 (7695), 183-189, 2018‏
1442018
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates‏
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer‏
Applied Physics Letters 110 (16), 2017‏
1222017
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics‏
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr‏
Applied physics express 4 (5), 055802, 2011‏
1032011
Electroluminescent properties of erbium-doped III–N light-emitting diodes‏
JM Zavada, SX Jin, N Nepal, JY Lin, HX Jiang, P Chow, B Hertog‏
Applied physics letters 84 (7), 1061-1063, 2004‏
1012004
Exciton localization in AlGaN alloys‏
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang‏
Applied physics letters 88 (6), 2006‏
922006
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition‏
C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada‏
Applied physics letters 89 (15), 2006‏
902006
Epitaxial growth of III–nitride/graphene heterostructures for electronic devices‏
N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ...‏
Applied Physics Express 6 (6), 061003, 2013‏
762013
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy‏
N Nepal, SB Qadri, JK Hite, NA Mahadik, MA Mastro, CR Eddy‏
Applied Physics Letters 103 (8), 2013‏
742013
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics‏
VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ...‏
Nature communications 11 (1), 2314, 2020‏
712020
Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation‏
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...‏
IEEE electron device letters 34 (9), 1115-1117, 2013‏
662013
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition‏
VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ...‏
Chemistry of Materials 32 (3), 1140-1152, 2020‏
642020
Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy‏
N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr‏
Crystal growth & design 13 (4), 1485-1490, 2013‏
622013
Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition‏
C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada‏
Applied physics letters 90 (5), 2007‏
592007
Optical properties of the nitrogen vacancy in AlN epilayers‏
N Nepal, KB Nam, ML Nakarmi, JY Lin, HX Jiang, JM Zavada, RG Wilson‏
Applied physics letters 84 (7), 1090-1092, 2004‏
592004
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20