متابعة
Babak Fallahazad
Babak Fallahazad
Intel Corporation
بريد إلكتروني تم التحقق منه على intel.com
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
The role of surface oxygen in the growth of large single-crystal graphene on copper‏
Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ...‏
Science 342 (6159), 720-723, 2013‏
12482013
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers‏
S Larentis, B Fallahazad, E Tutuc‏
Applied Physics Letters 101 (22), 2012‏
6402012
van der Waals heterostructures with high accuracy rotational alignment‏
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...‏
Nano letters 16 (3), 1989-1995, 2016‏
6362016
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene‏
K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ...‏
Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017‏
5122017
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors‏
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...‏
ACS nano 9 (10), 10402-10410, 2015‏
2972015
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility‏
B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ...‏
Physical review letters 116 (8), 086601, 2016‏
1972016
Gate-tunable resonant tunneling in double bilayer graphene heterostructures‏
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...‏
Nano letters 15 (1), 428-433, 2015‏
1922015
Chemical potential and quantum Hall ferromagnetism in bilayer graphene‏
K Lee, B Fallahazad, J Xue, DC Dillen, K Kim, T Taniguchi, K Watanabe, ...‏
Science 345 (6192), 58-61, 2014‏
1792014
Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures‏
S Larentis, JR Tolsma, B Fallahazad, DC Dillen, K Kim, AH MacDonald, ...‏
Nano letters 14 (4), 2039-2045, 2014‏
1722014
Band Alignment in WSe2–Graphene Heterostructures‏
K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ...‏
ACS nano 9 (4), 4527-4532, 2015‏
1712015
Scaling of Al2O3 dielectric for graphene field-effect transistors‏
B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ...‏
Applied Physics Letters 100 (9), 2012‏
1402012
Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric‏
B Fallahazad, S Kim, L Colombo, E Tutuc‏
Applied Physics Letters 97 (12), 2010‏
1342010
Direct measurement of the Fermi energy in graphene using a double-layer heterostructure‏
S Kim, I Jo, DC Dillen, DA Ferrer, B Fallahazad, Z Yao, SK Banerjee, ...‏
Physical review letters 108 (11), 116404, 2012‏
1282012
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits‏
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...‏
ACS nano 11 (5), 4832-4839, 2017‏
1242017
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer ‏
HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ...‏
Physical review letters 118 (24), 247701, 2017‏
1172017
High performance wire‐array silicon solar cells‏
O Gunawan, K Wang, B Fallahazad, Y Zhang, E Tutuc, S Guha‏
Progress in Photovoltaics: Research and Applications 19 (3), 307-312, 2011‏
1092011
Experimental demonstration of phase modulation and motion sensing using graphene-integrated metasurfaces‏
N Dabidian, S Dutta-Gupta, I Kholmanov, K Lai, F Lu, J Lee, M Jin, ...‏
Nano Letters 16 (6), 3607-3615, 2016‏
1062016
Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in ‏
S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ...‏
Physical Review B 97 (20), 201407, 2018‏
972018
Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET‏
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...‏
Electron Device Letters 36 (4), 405 - 407, 2015‏
662015
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures‏
GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ...‏
Nano letters 17 (6), 3919-3925, 2017‏
652017
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20