Feng Miao
Feng Miao
Professor of Physics, Nanjing University
Verified email at nju.edu.cn - Homepage
Title
Cited by
Cited by
Year
Superior thermal conductivity of single-layer graphene
AA Balandin, S Ghosh, W Bao, I Calizo, D Teweldebrhan, F Miao, CN Lau
Nano letters 8 (3), 902-907, 2008
115452008
Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits
S Ghosh, I Calizo, D Teweldebrhan, EP Pokatilov, DL Nika, AA Balandin, ...
Applied Physics Letters 92 (15), 151911-151911-3, 2008
18002008
Controlled ripple texturing of suspended graphene and ultrathin graphite membranes
W Bao, F Miao, Z Chen, H Zhang, W Jang, C Dames, CN Lau
Nature nanotechnology 4 (9), 562-566, 2009
12142009
Controlled ripple texturing of suspended graphene and ultrathin graphite membranes
W Bao, F Miao, Z Chen, H Zhang, W Jang, C Dames, CN Lau
Nature nanotechnology 4 (9), 562-566, 2009
12142009
Temperature dependence of the Raman spectra of graphene and graphene multilayers
I Calizo, AA Balandin, W Bao, F Miao, CN Lau
Nano letters 7 (9), 2645-2649, 2007
10202007
The mechanism of electroforming of metal oxide memristive switches
JJ Yang, F Miao, MD Pickett, DAA Ohlberg, DR Stewart, CN Lau, ...
Nanotechnology 20 (21), 215201, 2009
8302009
Phase-coherent transport in graphene quantum billiards
F Miao, S Wijeratne, Y Zhang, UC Coskun, W Bao, CN Lau
Science 317 (5844), 1530-1533, 2007
6862007
Hopping transport through defect-induced localized states in molybdenum disulphide
H Qiu, T Xu, Z Wang, W Ren, H Nan, Z Ni, Q Chen, S Yuan, F Miao, ...
Nature communications 4 (1), 1-6, 2013
6732013
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
H Nan, Z Wang, W Wang, Z Liang, Y Lu, Q Chen, D He, P Tan, F Miao, ...
ACS nano 8 (6), 5738-5745, 2014
6402014
High switching endurance in< equation>< font face='verdana'> TaO</font>< sub> x</sub></equation> memristive devices
JJ Yang, MX Zhang, JP Strachan, F Miao, MD Pickett, RD Kelley, ...
Applied Physics Letters 97 (23), 232102-232102-3, 2010
5832010
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
F Miao, JP Strachan, JJ Yang, MX Zhang, I Goldfarb, AC Torrezan, ...
Advanced Materials, 2011
3972011
Integrated digital inverters based on two-dimensional anisotropic ReS 2 field-effect transistors
E Liu, Y Fu, Y Wang, Y Feng, H Liu, X Wan, W Zhou, B Wang, L Shao, ...
Nature communications 6 (1), 1-7, 2015
3462015
The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass
I Calizo, W Bao, F Miao, CN Lau, AA Balandin
Applied Physics Letters 91 (20), 201904-201904-3, 2007
2852007
Spatially resolved spectroscopy of monolayer graphene on
A Deshpande, W Bao, F Miao, CN Lau, BJ LeRoy
Physical Review B 79 (20), 205411, 2009
2842009
Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices
I Calizo, F Miao, W Bao, CN Lau, AA Balandin
Applied Physics Letters 91 (7), 071913-071913-3, 2007
2302007
Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors
D He, Y Zhang, Q Wu, R Xu, H Nan, J Liu, J Yao, Z Wang, S Yuan, Y Li, ...
Nature communications 5 (1), 1-7, 2014
2192014
Engineering nonlinearity into memristors for passive crossbar applications
J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ...
Applied Physics Letters 100 (11), 113501, 2012
2002012
Broadband photovoltaic detectors based on an atomically thin heterostructure
M Long, E Liu, P Wang, A Gao, H Xia, W Luo, B Wang, J Zeng, Y Fu, K Xu, ...
Nano letters 16 (4), 2254-2259, 2016
1802016
Robust memristors based on layered two-dimensional materials
M Wang, S Cai, C Pan, C Wang, X Lian, Y Zhuo, K Xu, T Cao, X Pan, ...
Nature Electronics 1 (2), 130-136, 2018
1622018
High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection
E Liu, M Long, J Zeng, W Luo, Y Wang, Y Pan, W Zhou, B Wang, W Hu, ...
Advanced Functional Materials 26 (12), 1938-1944, 2016
1622016
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