Ishwara Bhat
Ishwara Bhat
Professor, Electrical Computer Systems Engineering
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Cited by
Cited by
Electrical characteristics of magnesium-doped gallium nitride junction diodes
JB Fedison, TP Chow, H Lu, IB Bhat
Applied physics letters 72 (22), 2841-2843, 1998
Material for selective deposition and etching
I Bhat, J Seiler, C Li
US Patent App. 11/215,185, 2006
Electro-chemical mechanical polishing of silicon carbide
C Li, IB Bhat, R Wang, J Seiler
Journal of electronic materials 33 (5), 481-486, 2004
Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy
JW Huang, TF Kuech, H Lu, I Bhat
Applied physics letters 68 (17), 2392-2394, 1996
The organometallic epitaxy of extrinsic p‐doped HgCdTe
NR Taskar, IB Bhat, KK Parat, D Terry, H Ehsani, SK Ghandhi
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989
Photoassisted anodic etching of gallium nitride
H Lu, Z Wu, I Bhat
Journal of the Electrochemical Society 144 (1), L8, 1997
Antimonide-based devices for thermophotovoltaic applications
CW Hitchcock, RJ Gutmann, JM Borrego, IB Bhat, GW Charache
IEEE Transactions on Electron Devices 46 (10), 2154-2161, 1999
Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition
DJ Olego, J Petruzzello, SK Ghandhi, NR Taskar, IB Bhat
Applied physics letters 51 (2), 127-129, 1987
Arsenic‐doped p‐CdTe layers grown by organometallic vapor phase epitaxy
SK Ghandhi, NR Taskar, IB Bhat
Applied physics letters 50 (14), 900-902, 1987
6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process
S Balachandran, C Li, PA Losee, IB Bhat, TP Chow
Proceedings of the 19th International Symposium on Power Semiconductor …, 2007
Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry
B Johs, D Doerr, S Pittal, IB Bhat, S Dakshinamurthy
Thin Solid Films 233 (1-2), 293-296, 1993
On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy
IB Bhat, NR Taskar, SK Ghandhi
Journal of the Electrochemical Society 134 (1), 195, 1987
Ternary and quaternary antimonide devices for thermophotovoltaic applications
CW Hitchcock, RJ Gutmann, H Ehsani, IB Bhat, CA Wang, MJ Freeman, ...
Journal of crystal growth 195 (1-4), 363-372, 1998
Epitaxial growth of AlN and layers on aluminum nitride substrates
LJ Schowalter, Y Shusterman, R Wang, I Bhat, G Arunmozhi, GA Slack
Applied Physics Letters 76 (8), 985-987, 2000
High quality Hg1−xCdxTe epitaxial layers by the organometallic process
SK Ghandhi, I Bhat
Applied physics letters 44 (8), 779-781, 1984
Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity
SK Ghandhi, IB Bhat, H Fardi
Applied physics letters 52 (5), 392-394, 1988
High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination
PA Losee, SK Balachandran, L Zhu, C Li, J Seiler
ISPSD'04 (proceedings of the 16th International Symposium on Power …, 2004
Small angle grain boundary Ge films on biaxial CaF2/glass substrate
C Gaire, PC Clemmer, HF Li, TC Parker, P Snow, I Bhat, S Lee, GC Wang, ...
Journal of Crystal Growth 312 (4), 607-610, 2010
Growth of (100) oriented CdTe on Si using Ge as a buffer layer
I Bhat, WS Wang
Applied physics letters 64 (5), 566-568, 1994
Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors
R Wang, IB Bhat, TP Chow
Journal of applied physics 92 (12), 7587-7592, 2002
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