| A room-temperature magnetic semiconductor from a ferromagnetic metallic glass W Liu, H Zhang, J Shi, Z Wang, C Song, X Wang, S Lu, X Zhou, L Gu, ... Nature communications 7 (1), 13497, 2016 | 87 | 2016 |
| 6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 45 | 2021 |
| An improved methodology for extracting interface state density at Si3N4/GaN W Liu, I Sayed, C Gupta, H Li, S Keller, U Mishra Applied Physics Letters 116 (2), 2020 | 26 | 2020 |
| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 18 | 2023 |
| Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN I Sayed, W Liu, S Chan, C Gupta, M Guidry, H Li, S Keller, U Mishra Applied Physics Letters 115 (3), 2019 | 18 | 2019 |
| Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices I Sayed, W Liu, J Georgieva, A Krishna, S Keller, UK Mishra Semiconductor Science and Technology 35 (9), 095027, 2020 | 14 | 2020 |
| Electrical properties and interface abruptness of alsio gate dielectric grown on 0001 n-polar and (0001) ga-polar gan I Sayed, B Bonef, W Liu, S Chan, J Georgieva, JS Speck, S Keller, ... Applied Physics Letters 115 (17), 2019 | 14 | 2019 |
| Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) ZA Jian, I Sayed, W Liu, S Mohanty, E Ahmadi Applied Physics Letters 118 (17), 2021 | 13 | 2021 |
| Transparent magnetic semiconductor with embedded metallic glass nano-granules N Chen, H Li, A Hirata, Z Luo, Z Wang, W Liu, B Cui, T Hitosugi, L Gu, ... Materials & Design 132, 208-214, 2017 | 12 | 2017 |
| Amorphous magnetic semiconductors with Curie temperatures above room temperature N Chen, K Fang, H Zhang, Y Zhang, W Liu, K Yao, Z Zhang Journal of Semiconductors 40 (8), 081510, 2019 | 11 | 2019 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters, 2023 | 9 | 2023 |
| A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods W Liu, I Sayed, J Georgieva, S Chan, S Keller, UK Mishra Journal of Applied Physics 128 (7), 2020 | 9 | 2020 |
| Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD I Sayed, W Liu, B Romanczyk, J Georgieva, S Chan, S Keller, UK Mishra Applied Physics Express 13 (6), 061010, 2020 | 9 | 2020 |
| Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ... 2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022 | 8 | 2022 |
| Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current W Liu, I Sayed, B Romanczyk, N Hatui, M Guidry, WJ Mitchell, S Keller, ... IEEE Electron Device Letters 41 (10), 1468-1471, 2020 | 8 | 2020 |
| Improved N-polar GaN mm-wave linearity, efficiency, and noise M Guidry, P Shrestha, W Liu, B Romanczyk, N Hatui, C Wurm, R Karnaty, ... 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 291-294, 2022 | 7 | 2022 |
| Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN I Sayed, W Liu, S Chan, C Gupta, H Li, S Keller, UK Mishra Applied Physics Express 12 (12), 121001, 2019 | 7 | 2019 |
| Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing ZA Jian, I Sayed, S Mohanty, W Liu, E Ahmadi Semiconductor Science and Technology 36 (9), 09LT03, 2021 | 6 | 2021 |
| Metallic glass-strengthened thermoplastic elastomer composites X Liu, H Liu, D Wang, E Wang, W Liu, K Yao, N Chen Physica E: Low-dimensional Systems and Nanostructures 90, 37-41, 2017 | 6 | 2017 |
| GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate A Raj, A Krishna, B Romanczyk, N Hatui, W Liu, S Keller, UK Mishra IEEE Electron Device Letters 44 (1), 9-12, 2022 | 5 | 2022 |
