| Conducting polymer-inorganic nanocomposite-based gas sensors: a review Y Yan, G Yang, JL Xu, M Zhang, CC Kuo, SD Wang Science and Technology of Advanced Materials 21 (1), 768-786, 2020 | 108 | 2020 |
| Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors W Zhou, Z Meng, S Zhao, M Zhang, R Chen, M Wong, HS Kwok IEEE electron device letters 33 (10), 1414-1416, 2012 | 54 | 2012 |
| Self-aligned indium–gallium–zinc oxide thin-film transistor with phosphorus-doped source/drain regions R Chen, W Zhou, M Zhang, M Wong, HS Kwok IEEE electron device letters 33 (8), 1150-1152, 2012 | 52 | 2012 |
| Design of metals sulfides with carbon materials for supercapacitor applications: a review MF Iqbal, MN Ashiq, M Zhang Energy Technology 9 (4), 2000987, 2021 | 48 | 2021 |
| Self-aligned indium–gallium–zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic R Chen, W Zhou, M Zhang, M Wong, HS Kwok IEEE Electron Device Letters 34 (1), 60-62, 2012 | 46 | 2012 |
| Multifunctional optoelectronic device based on an asymmetric active layer structure B Ren, G Yuen, S Deng, L Jiang, D Zhou, L Gu, P Xu, M Zhang, Z Fan, ... Advanced Functional Materials 29 (17), 1807894, 2019 | 42 | 2019 |
| Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric R Chen, W Zhou, M Zhang, M Wong, HS Kwok Thin Solid Films 548, 572-575, 2013 | 41 | 2013 |
| VO2 based dynamic tunable absorber and its application in switchable control and real-time color display in the visible region J He, M Zhang, S Shu, Y Yan, M Wang Optics Express 28 (25), 37590-37599, 2020 | 40 | 2020 |
| Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017 | 40 | 2017 |
| TiO 2 based sensor with butterfly wing configurations for fast acetone detection at room temperature G Yang, M Zhang, D Dong, X Pan, Y Zhou, ST Han, Z Xu, W Wang, Y Yan Journal of Materials Chemistry C 7 (36), 11118-11125, 2019 | 38 | 2019 |
| Lattice strain modulation toward efficient blue perovskite light-emitting diodes B Liu, J Li, G Wang, F Ye, H Yan, M Zhang, SC Dong, L Lu, P Huang, T He, ... Science Advances 8 (38), eabq0138, 2022 | 37 | 2022 |
| Voltage‐Dependent Multicolor Electroluminescent Device Based on Halide Perovskite and Chalcogenide Quantum‐Dots Emitters J Zhang, B Ren, S Deng, J Huang, L Jiang, D Zhou, X Zhang, M Zhang, ... Advanced Functional Materials 30 (4), 1907074, 2020 | 36 | 2020 |
| Analysis of degradation mechanisms in low-temperature polycrystalline silicon thin-film transistors under dynamic drain stress M Zhang, M Wang, X Lu, M Wong, HS Kwok IEEE transactions on electron devices 59 (6), 1730-1737, 2012 | 36 | 2012 |
| High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok Applied Physics Letters 109 (18), 2016 | 34 | 2016 |
| High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric R Chen, W Zhou, M Zhang, HS Kwok Thin Solid Films 520 (21), 6681-6683, 2012 | 33 | 2012 |
| Degradation of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors under synchronized voltage stress M Zhang, M Wang, H Wang, J Zhou IEEE transactions on electron devices 56 (11), 2726-2732, 2009 | 28 | 2009 |
| Bridged-grain polycrystalline silicon thin-film transistors S Zhao, Z Meng, W Zhou, J Ho, M Wong, HS Kwok IEEE transactions on electron devices 60 (6), 1965-1970, 2013 | 27 | 2013 |
| Characterization of DC-stress-induced degradation in bridged-grain polycrystalline silicon thin-film transistors M Zhang, W Zhou, R Chen, M Wong, HS Kwok IEEE Transactions on Electron Devices 61 (9), 3206-3212, 2014 | 22 | 2014 |
| A Simple Method to Grow Thermal Interlayer for High-Performance SPC Poly-Si TFTs Using Gate Dielectric M Zhang, W Zhou, R Chen, M Wong, HS Kwok IEEE electron device letters 35 (5), 548-550, 2014 | 18 | 2014 |
| Vertically integrated optical sensor with photoconductive gain> 10 and fill factor> 70% X Zhou, M Zhang, Y Xu, W Zhou, K Wang, A Nathan, M Wong, HS Kwok, ... IEEE Electron Device Letters 39 (3), 386-389, 2018 | 16 | 2018 |
