| A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 128 I/Os Using TSV Based Stacking JS Kim, CS Oh, H Lee, D Lee, HR Hwang, S Hwang, B Na, J Moon, ... IEEE Journal of Solid-State Circuits 47 (1), 107-116, 2012 | 390 | 2012 |
| Quantifying the relationship between the power delivery network and architectural policies in a 3D-stacked memory device M Shevgoor, JS Kim, N Chatterjee, R Balasubramonian, A Davis, ... Proceedings of the 46th Annual IEEE/ACM International Symposium on …, 2013 | 56 | 2013 |
| Semiconductor devices and semiconductor packages CS Oh, JS Kim, HC Lee, JB Lee US Patent 8,799,730, 2014 | 52 | 2014 |
| SEMICONDUCTOR DEVICES AND SEMICONDUCTOR PACKAGES J Kim, H Lee, J Lee US Patent App. 13/453,447, 2012 | 52* | 2012 |
| Semiconductor device having interconnection in package and method for manufacturing the same J Lee, JS Kim, Y Lee, D Kim, S Yim, K Park, C Park US Patent 9,805,769, 2017 | 45 | 2017 |
| Semiconductor memory device that controls refresh period, memory system and operating method thereof JS Kim, C Kim, SH Shin US Patent 9,490,001, 2016 | 42 | 2016 |
| Semiconductor device with stacked structure having through electrode, semiconductor memory device, semiconductor memory system, and operating method thereof JS Kim, DH Lee, HC Lee, JW Ryu US Patent 8,801,279, 2014 | 35 | 2014 |
| 23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme CK Lee, YJ Eom, JH Park, J Lee, HR Kim, K Kim, Y Choi, HJ Chang, J Kim, ... Solid-State Circuits Conference (ISSCC), 2017 IEEE International, 390-391, 2017 | 33 | 2017 |
| Semiconductor memory device storing refresh period information and operating method thereof JS Kim, JB Lee US Patent 9,082,504, 2015 | 20 | 2015 |
| Integrated circuit having power gating function and semiconductor device including the same JS Kim US Patent App. 13/367,411, 2012 | 17 | 2012 |
| Memory device to correct defect cell generated after packaging C Kim, SH Shin, JS Kim US Patent 9,455,047, 2016 | 15 | 2016 |
| Semiconductor memory device having improved refresh characteristics JS Kim, C Kim, SH Shin, JB Lee, CY Lee, SM Yim, TS Jang, JS Choi US Patent 9,036,439, 2015 | 13 | 2015 |
| Semiconductor memory device, systems and methods improving refresh quality for weak cell JS Kim, J Lee US Patent App. 13/802,748, 2013 | 12 | 2013 |
| Internal power generating apparatus, multichannel memory including the same, and processing system employing the multichannel memory JS Kim, HC Lee, JW Ryu US Patent 8,315,121, 2012 | 12 | 2012 |
| Input buffer with wide input voltage range DI Seo, HD Kim, J Kim US Patent 7,365,571, 2008 | 12 | 2008 |
| Circuit and method for generating internal voltage, and semiconductor device having the circuit SY Kim, JS Kim, JW Ryu, HC Lee, JB Lee US Patent 8,278,992, 2012 | 11 | 2012 |
| A 512 Mb two-channel mobile DRAM (OneDRAM) with shared memory array JS Kim, K Nam, CS Oh, HG Sohn, D Lee, S Kim, JW Park, Y Kim, MJ Kim, ... IEEE Journal of Solid-State Circuits 43 (11), 2381-2389, 2008 | 10 | 2008 |
| A 512 mb 2-channel mobile DRAM (oneDRAM™) with shared memory array K Nam, JS Kim, CS Oh, H Sohn, DH Lee, C Lee, S Kim, JW Park, Y Kim, ... Solid-State Circuits Conference, 2007. ASSCC'07. IEEE Asian, 204-207, 2007 | 9 | 2007 |
| Memory device, method of operating the same, and apparatus including the same Y Lim, C Kim, JS Kim, YS Lee US Patent 8,737,153, 2014 | 8 | 2014 |
| Theory of 1/f noise currents in semiconductor devices with one-dimensional geometry and its application to Si Schottky barrier diodes JS Kim, YS Kim, HS Min, YJ Park IEEE Transactions on Electron Devices 48 (12), 2875-2883, 2001 | 8 | 2001 |
Donghyuk LeeNVIDIAVerified email at nvidia.com
