| Theoretical study of metal-insulator-metal tunneling diode figures of merit IE Hashem Sayed, NH Rafat, EA Soliman IEEE Journal of Quantum Electronics 49 (1), 72-79, 2013 | 79* | 2013 |
| Quantum well solar cells: principles, recent progress, and potential I Sayed, SM Bedair IEEE Journal of Photovoltaics 9 (2), 402-423, 2019 | 59 | 2019 |
| Dipole nantennas terminated by traveling wave rectifiers for ambient thermal energy harvesting IE Sayed Hashem, NH Rafat, EA Soliman IEEE Transactions on Nanotechnology 13 (4), 767-778, 2014 | 41 | 2014 |
| InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties IE Hashem Sayed, CZ Carlin, BG Hagar, PC Colter, SM Bedair Journal of Applied Physics 119 (9), 095706, 2016 | 29 | 2016 |
| An improved methodology for extracting interface state density at Si3N4/GaN W Liu, I Sayed, C Gupta, H Li, S Keller, U Mishra Applied Physics Letters 116 (2), 2020 | 26 | 2020 |
| 100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80% IEH Sayed, N Jain, MA Steiner, JF Geisz, SM Bedair Applied Physics Letters 111 (8), 2017 | 21 | 2017 |
| High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface SM Bedair, JL Harmon, CZ Carlin, IE Hashem Sayed, PC Colter Applied Physics Letters 108 (20), 2016 | 20 | 2016 |
| Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65–1.82 eV) IEH Sayed, CZ Carlin, BG Hagar, PC Colter, SM Bedair IEEE Journal of Photovoltaics, 2016 | 19 | 2016 |
| Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN I Sayed, W Liu, S Chan, C Gupta, M Guidry, H Li, S Keller, U Mishra Applied Physics Letters 115 (3), 032103, 2019 | 18 | 2019 |
| Electrical properties and interface abruptness of alsio gate dielectric grown on 0001 n-polar and (0001) ga-polar gan I Sayed, B Bonef, W Liu, S Chan, J Georgieva, JS Speck, S Keller, ... Applied Physics Letters 115 (17), 2019 | 14 | 2019 |
| Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) ZA Jian, I Sayed, W Liu, S Mohanty, E Ahmadi Applied Physics Letters 118 (17), 2021 | 13 | 2021 |
| Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices I Sayed, W Liu, J Georgieva, A Krishna, S Keller, UK Mishra Semiconductor Science and Technology 35 (9), 095027, 2020 | 13 | 2020 |
| Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors A Krishna, A Raj, N Hatui, I Sayed, S Keller, UK Mishra Applied Physics Letters 117 (4), 2020 | 13 | 2020 |
| Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 2022 | 12 | 2022 |
| Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions S Mohanty, I Sayed, ZA Jian, U Mishra, E Ahmadi Applied Physics Letters 119 (4), 2021 | 12 | 2021 |
| Nanocrescent antenna as a transceiver for optical communication systems IE Sayed Hashem, NH Rafat, EA Soliman 2014 IEEE International Symposium on Electromagnetic Compatibility (EMC), 39-45, 2014 | 11 | 2014 |
| A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods W Liu, I Sayed, J Georgieva, S Chan, S Keller, UK Mishra Journal of Applied Physics 128 (7), 2020 | 9 | 2020 |
| Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD I Sayed, W Liu, B Romanczyk, J Georgieva, S Chan, S Keller, UK Mishra Applied Physics Express 13 (6), 061010, 2020 | 9 | 2020 |
| Tunable GaInP solar cell lattice matched to GaAs I Sayed, CZ Carlin, B Hagar, PC Colter, SM Bedair Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 1-4, 2015 | 9 | 2015 |
| Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current W Liu, I Sayed, B Romanczyk, N Hatui, M Guidry, WJ Mitchell, S Keller, ... IEEE Electron Device Letters 41 (10), 1468-1471, 2020 | 8 | 2020 |
Umesh MishraUCSBVerified email at ece.ucsb.edu
