Advances, challenges and opportunities in 3D CMOS sequential integration P Batude, M Vinet, B Previtali, C Tabone, C Xu, J Mazurier, O Weber, ...
2011 International Electron Devices Meeting, 7.3. 1-7.3. 4, 2011
387 2011 Impact of SOI, Si1-x Gex OI and GeOI substrates on CMOS compatible Tunnel FET performance F Mayer, C Le Royer, JF Damlencourt, K Romanjek, F Andrieu, C Tabone, ...
2008 IEEE International Electron Devices Meeting, 1-5, 2008
363 2008 Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ...
2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010
309 2010 Engineered substrates for future More Moore and More than Moore integrated devices L Clavelier, C Deguet, L Di Cioccio, E Augendre, A Brugere, P Gueguen, ...
2010 International Electron Devices Meeting, 2.6. 1-2.6. 4, 2010
254 2010 Novel integration process and performances analysis of Low STandby Power (LSTP) 3D Multi-Channel CMOSFET (MCFET) on SOI with Metal/High-K Gate stack E Bernard, T Ernst, B Guillaumot, N Vulliet, V Barral, V Maffini-Alvaro, ...
2008 Symposium on VLSI Technology, 16-17, 2008
239 2008 Multi- JP Noel, O Thomas, MA Jaud, O Weber, T Poiroux, C Fenouillet-Beranger, ...
IEEE Transactions on Electron Devices 58 (8), 2473-2482, 2011
230 2011 High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding O Weber, O Faynot, F Andrieu, C Buj-Dufournet, F Allain, P Scheiblin, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
216 2008 Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs K Romanjek, F Andrieu, T Ernst, G Ghibaudo
IEEE Electron Device Letters 25 (8), 583-585, 2004
191 2004 Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters M Cassé, L Thevenod, B Guillaumot, L Tosti, F Martin, J Mitard, O Weber, ...
IEEE Transactions on Electron Devices 53 (4), 759-768, 2006
188 2006 FDSOI devices with thin BOX and ground plane integration for 32 nm node and below C Fenouillet-Beranger, S Denorme, P Perreau, C Buj, O Faynot, F Andrieu, ...
Solid-State Electronics 53 (7), 730-734, 2009
163 2009 Engineering strained silicon on insulator wafers with the Smart CutTM technology B Ghyselen, JM Hartmann, T Ernst, C Aulnette, B Osternaud, ...
Solid-state electronics 48 (8), 1285-1296, 2004
158 2004 Performance and design considerations for gate-all-around stacked-NanoWires FETs S Barraud, V Lapras, B Previtali, MP Samson, J Lacord, S Martinie, ...
2017 IEEE international electron devices meeting (IEDM), 29.2. 1-29.2. 4, 2017
127 2017 14nm FDSOI technology for high speed and energy efficient applications O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
113 2014 Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond F Andrieu, O Weber, J Mazurier, O Thomas, JP Noel, ...
2010 Symposium on VLSI Technology, 57-58, 2010
112 2010 Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below C Fenouillet-Beranger, P Perreau, S Denorme, L Tosti, F Andrieu, ...
2009 Proceedings of the European Solid State Device Research Conference, 89-92, 2009
108 2009 Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack V Barral, T Poiroux, F Andrieu, C Buj-Dufournet, O Faynot, T Ernst, ...
2007 IEEE International Electron Devices Meeting, 61-64, 2007
99 2007 Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack T Ernst, C Dupre, C Isheden, E Bernard, R Ritzenthaler, V Maffini-Alvaro, ...
2006 International Electron Devices Meeting, 1-4, 2006
98 2006 3D Sequential Integration: Application-driven technological achievements and guidelines P Batude, L Brunet, C Fenouillet-Beranger, F Andrieu, JP Colinge, ...
2017 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2017
90 2017 Strained tunnel FETs with record ION : first demonstration of ETSOI TFETs with SiGe channel and RSD A Villalon, C Le Royer, M Cassé, D Cooper, B Prévitali, C Tabone, ...
2012 Symposium on VLSI technology (VLSIT), 49-50, 2012
89 2012 Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features TP Ernst, F Andrieu, O Weber, JM Hartmann, C Dupre, O Faynot, ...
ECS Transactions 3 (7), 947, 2006
89 2006 