متابعة
Patrick Fiorenza
Patrick Fiorenza
Consiglio Nazionale delle Ricerche - Insituto per la Microelettronica e Microsistemi, Catania Italia
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عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices‏
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ...‏
Microelectronic Engineering 187, 66-77, 2018‏
4222018
An overview of normally-off GaN-based high electron mobility transistors‏
F Roccaforte, G Greco, P Fiorenza, F Iucolano‏
Materials 12 (10), 1599, 2019‏
2392019
Recent advances on dielectrics technology for SiC and GaN power devices‏
F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...‏
Applied Surface Science 301, 9-18, 2014‏
1742014
Challenges for energy efficient wide band gap semiconductor power devices‏
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ...‏
physica status solidi (a) 211 (9), 2063-2071, 2014‏
1352014
Non-stoichiometry in “CaCu 3 Ti 4 O 12”(CCTO) ceramics‏
R Schmidt, S Pandey, P Fiorenza, DC Sinclair‏
RSC advances 3 (34), 14580-14589, 2013‏
1082013
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review‏
P Fiorenza, F Giannazzo, F Roccaforte‏
Energies 12 (12), 2310, 2019‏
952019
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3‏
P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte‏
Applied Physics Letters 103 (15), 2013‏
942013
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors‏
A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte‏
Applied Physics Letters 99 (7), 2011‏
802011
Critical issues for interfaces to p-type SiC and GaN in power devices‏
F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ...‏
Applied Surface Science 258 (21), 8324-8333, 2012‏
732012
Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3‏
LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte‏
Applied Physics Letters 101 (19), 2012‏
662012
Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors‏
P Fiorenza, A Frazzetto, A Guarnera, M Saggio, F Roccaforte‏
Applied Physics Letters 105 (14), 2014‏
622014
Localized electrical characterization of the giant permittivity effect in CaCu3Ti4O12 ceramics‏
P Fiorenza, R Lo Nigro, C Bongiorno, V Raineri, MC Ferarrelli, ...‏
Applied Physics Letters 92 (18), 2008‏
622008
Conductive atomic force microscopy studies of thin SiO2 layer degradation‏
P Fiorenza, W Polspoel, W Vandervorst‏
Applied physics letters 88 (22), 2006‏
602006
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2as Gate Insulator‏
P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte‏
IEEE Transactions on Electron Devices 64 (7), 2893-2899, 2017‏
482017
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3‏
P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ...‏
Applied Physics A 115, 333-339, 2014‏
472014
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures‏
F Roccaforte, G Greco, P Fiorenza, V Raineri, G Malandrino, R Lo Nigro‏
Applied Physics Letters 100 (6), 2012‏
462012
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer‏
G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...‏
ACS applied materials & interfaces 9 (8), 7761-7771, 2017‏
452017
Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC‏
E Schilirò, R Lo Nigro, P Fiorenza, F Roccaforte‏
AIP Advances 6 (7), 2016‏
452016
Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates‏
G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ...‏
Beilstein journal of nanotechnology 4 (1), 234-242, 2013‏
442013
Physics and technology of gallium nitride materials for power electronics‏
F Roccaforte, P Fiorenza, R Lo Nigro, F Giannazzo, G Greco‏
LA RIVISTA DEL NUOVO CIMENTO 41 (12), 625-681, 2018‏
432018
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مقالات 1–20