Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon J Kolodzey, EA Chowdhury, TN Adam, G Qui, I Rau, JO Olowolafe, ...
IEEE Transactions on Electron Devices 47 (1), 121-128, 2000
269 2000 Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films ZE Smith, V Chu, K Shepard, S Aljishi, D Slobodin, J Kolodzey, S Wagner, ...
Applied physics letters 50 (21), 1521-1523, 1987
210 1987 Room temperature operation of epitaxially grown SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
205 1998 Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy J Kolodzey, PA O’neil, S Zhang, BA Orner, K Roe, KM Unruh, CP Swann, ...
Applied physics letters 67 (13), 1865-1867, 1995
127 1995 Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey
Applied physics letters 102 (25), 2013
120 2013 Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey
Applied Physics Letters 103 (4), 2013
114 2013 Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors J Piprek, T Troger, B Schroter, J Kolodzey, CS Ih
IEEE Photonics Technology Letters 10 (1), 81-83, 1998
110 1998 The electrical properties of MIS capacitors with AlN gate dielectrics T Adam, J Kolodzey, CP Swann, MW Tsao, JF Rabolt
Applied Surface Science 175, 428-435, 2001
103 2001 Fiber optics light switch JS Kolodzey, GR Stilwell Jr, EC Uberbacher
US Patent 4,245,886, 1981
100 1981 Terahertz electroluminescence from boron-doped silicon devices TN Adam, RT Troeger, SK Ray, PC Lv, J Kolodzey
Applied physics letters 83 (9), 1713-1715, 2003
82 2003 Carbon incorporation in MW Dashiell, LV Kulik, D Hits, J Kolodzey, G Watson
Applied Physics Letters 72 (7), 833-835, 1998
76 1998 Electroluminescence at 7 terahertz from phosphorus donors in silicon PC Lv, RT Troeger, TN Adam, S Kim, J Kolodzey, IN Yassievich, ...
Applied physics letters 85 (1), 22-24, 2004
74 2004 Semiconductor device with controlled negative differential resistance characteristic JP Leburton, J Kolodzey
US Patent 5,021,841, 1991
74 1991 Optical and electronic properties of SiGeC alloys grown on Si substrates J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ...
Journal of crystal growth 157 (1-4), 386-391, 1995
73 1995 Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
72 2000 Initial stages of trapping in a-Si: H observed by femtosecond spectroscopy PM Fauchet, D Hulin, A Migus, A Antonetti, J Kolodzey, S Wagner
Physical review letters 57 (19), 2438, 1986
71 1986 Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
70 2001 Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer T Moriyama, R Cao, X Fan, G Xuan, BK Nikolić, Y Tserkovnyak, ...
Physical review letters 100 (6), 067602, 2008
66 2008 Properties of a ‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor J Kolodzey, S Aljishi, R Schwarz, D Slobodin, S Wagner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (6 …, 1986
61 1986 Thermally oxidized AlN thin films for device insulators EA Chowdhury, J Kolodzey, JO Olowolafe, G Qiu, G Katulka, D Hits, ...
Applied physics letters 70 (20), 2732-2734, 1997
57 1997 