| Integrated germanium optical interconnects on silicon substrates P Chaisakul, D Marris-Morini, J Frigerio, D Chrastina, MS Rouifed, ... Nature Photonics 8 (6), 482-488, 2014 | 225 | 2014 |
| Ferroelectric control of the spin texture in GeTe C Rinaldi, S Varotto, M Asa, J Sławińska, J Fujii, G Vinai, S Cecchi, ... Nano letters 18 (5), 2751-2758, 2018 | 121 | 2018 |
| Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ... Physical review letters 109 (5), 057402, 2012 | 118 | 2012 |
| Optical spin injection and spin lifetime in Ge heterostructures F Pezzoli, F Bottegoni, D Trivedi, F Ciccacci, A Giorgioni, P Li, S Cecchi, ... Physical Review Letters 108 (15), 156603, 2012 | 114 | 2012 |
| Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016 | 105 | 2016 |
| The thermoelectric properties of Ge/SiGe modulation doped superlattices A Samarelli, L Ferre Llin, S Cecchi, J Frigerio, T Etzelstorfer, E Müller, ... Journal of applied physics 113 (23), 233704, 2013 | 83 | 2013 |
| The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices L Ferre Llin, A Samarelli, S Cecchi, T Etzelstorfer, E Müller Gubler, ... Applied physics letters 103 (14), 143507, 2013 | 63 | 2013 |
| 2D or not 2D: strain tuning in weakly coupled heterostructures R Wang, FRL Lange, S Cecchi, M Hanke, M Wuttig, R Calarco Advanced functional materials 28 (14), 1705901, 2018 | 53 | 2018 |
| Spin polarized photoemission from strained Ge epilayers F Bottegoni, G Isella, S Cecchi, F Ciccacci Applied Physics Letters 98 (24), 242107, 2011 | 43 | 2011 |
| Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride S Varotto, L Nessi, S Cecchi, J Sławińska, P Noël, S Petrò, F Fagiani, ... Nature Electronics 4 (10), 740-747, 2021 | 34 | 2021 |
| Electro-refractive effect in Ge/SiGe multiple quantum wells J Frigerio, P Chaisakul, D Marris-Morini, S Cecchi, MS Roufied, G Isella, ... Applied physics letters 102 (6), 061102, 2013 | 33 | 2013 |
| Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells A Giorgioni, S Paleari, S Cecchi, E Vitiello, E Grilli, G Isella, W Jantsch, ... Nature communications 7 (1), 13886, 2016 | 32 | 2016 |
| Photoinduced inverse spin Hall effect in Pt/Ge (001) at room temperature F Bottegoni, A Ferrari, S Cecchi, M Finazzi, F Ciccacci, G Isella Applied Physics Letters 102 (15), 152411, 2013 | 32 | 2013 |
| Thin SiGe virtual substrates for Ge heterostructures integration on silicon S Cecchi, E Gatti, D Chrastina, J Frigerio, E Müller Gubler, DJ Paul, ... Journal of Applied Physics 115 (9), 093502, 2014 | 31 | 2014 |
| 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates K Gallacher, P Velha, DJ Paul, S Cecchi, J Frigerio, D Chrastina, G Isella Applied Physics Letters 101 (21), 211101, 2012 | 28 | 2012 |
| Ge/SiGe superlattices for thermoelectric energy conversion devices S Cecchi, T Etzelstorfer, E Müller, A Samarelli, L Ferre Llin, D Chrastina, ... Journal of Materials Science 48 (7), 2829-2835, 2012 | 28 | 2012 |
| Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys S Cecchi, D Dragoni, D Kriegner, E Tisbi, E Zallo, F Arciprete, V Holý, ... Advanced functional materials 29 (2), 1805184, 2019 | 27 | 2019 |
| Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys E Zallo, S Cecchi, JE Boschker, AM Mio, F Arciprete, S Privitera, ... Scientific Reports 7 (1), 1466, 2017 | 27 | 2017 |
| Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation S Cecchi, E Zallo, J Momand, R Wang, BJ Kooi, MA Verheijen, R Calarco APL Materials 5 (2), 026107, 2017 | 27 | 2017 |
| Thermal transport through short-period SiGe nanodot superlattices P Chen, JJ Zhang, JP Feser, F Pezzoli, O Moutanabbir, S Cecchi, G Isella, ... Journal of Applied Physics 115 (4), 044312, 2014 | 25 | 2014 |
Giovanni IsellaPolitecnico di MilanoVerified email at polimi.it
