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Dr. C. J. Pinzone
Dr. C. J. Pinzone
ams-Osram
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
Alignment techniques for epitaxial growth processes
RA Hamm, RF Kopf, CJ Pinzone, RW Ryan, A Tate
US Patent 6,294,018, 2001
2542001
Process for bonding crystalline substrates with different crystal lattices
BF Levine, CJ Pinzone
US Patent 5,966,622, 1999
1101999
Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates
JP Van der Ziel, RD Dupuis, RA Logan, CJ Pinzone
Applied physics letters 51 (2), 89-91, 1987
1011987
Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates
JP Van der Ziel, RD Dupuis, RA Logan, RM Mikulyak, CJ Pinzone, ...
Applied physics letters 50 (8), 454-456, 1987
671987
Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition
RD Dupuis, JP Van der Ziel, RA Logan, JM Brown, CJ Pinzone
Applied physics letters 50 (7), 407-409, 1987
541987
Homogeneous photonic integration of mid-infrared quantum cascade lasers with low-loss passive waveguides on an InP platform
S Jung, D Palaferri, K Zhang, F Xie, Y Okuno, C Pinzone, K Lascola, ...
Optica 6 (8), 1023-1030, 2019
422019
Controlled spontaneous emission in room‐temperature semiconductor microcavities
DL Huffaker, C Lei, DG Deppe, CJ Pinzone, JG Neff, RD Dupuis
Applied Physics Letters 60 (26), 3203-3205, 1992
361992
Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors
BF Levine, CJ Pinzone, S Hui, CA King, RE Leibenguth, DR Zolnowski, ...
Applied physics letters 75 (14), 2141-2143, 1999
301999
Quarter‐wave Bragg reflector stack of InP‐In0.53Ga0.47As for 1.65 μm wavelength
DG Deppe, ND Gerrard, CJ Pinzone, RD Dupuis, EF Schubert
Applied physics letters 56 (4), 315-317, 1990
301990
Method for attractive bonding of two crystalline substrates
SP Hui, BF Levine, CJ Pinzone, GA Thomas
US Patent 6,187,653, 2001
272001
Heavily‐doped n‐type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin
CJ Pinzone, ND Gerrard, RD Dupuis, NT Ha, HS Luftman
Journal of applied physics 67 (11), 6823-6829, 1990
261990
Room‐temperature photopumped operation of an InGaAs‐InP vertical cavity surface‐emitting laser
DG Deppe, S Singh, RD Dupuis, ND Gerrard, GJ Zydzik, JP van der Ziel, ...
Applied physics letters 56 (22), 2172-2174, 1990
231990
Spectral and intensity dependence on dipole localization in Fabry–Perot cavities
Z Huang, C Lei, DG Deppe, CC Lin, CJ Pinzone, RD Dupuis
Applied physics letters 61 (25), 2961-2963, 1992
181992
Phenomenology of Zn diffusion and incorporation in InP grown by organometallic vapor‐phase epitaxy (OMVPE)
EF Schubert, CJ Pinzone, M Geva
Applied physics letters 67 (5), 700-702, 1995
161995
Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition
RD Dupuis, JG Neff, CJ Pinzone
Journal of crystal growth 124 (1-4), 558-564, 1992
151992
The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition
RD Dupuis, CJ Pinzone
Journal of Crystal Growth 93 (1-4), 434-442, 1988
141988
Triple-mesa avalanche photodiodes with very low surface dark current
Y Yuan, Y Li, J Abell, JY Zheng, K Sun, C Pinzone, JC Campbell
Optics Express 27 (16), 22923-22929, 2019
132019
Very high current gain InGaAs/InP heterojunction bipolar transistors grown by metalorganic chemical vapour deposition
CS Kyono, ND Gerrard, CJ Pinzone, CM Maziar, RD Dupuis
Electronics Letters 27 (1), 40-41, 1991
131991
In0. 47Ga0. 53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength
RD Dupuis, DG Deppe, CJ Pinzone, ND Gerrard, S Singh, GJ Zydzik, ...
Journal of crystal growth 107 (1-4), 790-795, 1991
121991
Spectral interference effects in the light emission from Fabry–Perot cavities
C Lei, Z Huang, DG Deppe, CJ Pinzone, RD Dupuis
Journal of applied physics 73 (6), 2700-2704, 1993
101993
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Articles 1–20