Alignment techniques for epitaxial growth processes RA Hamm, RF Kopf, CJ Pinzone, RW Ryan, A Tate US Patent 6,294,018, 2001 | 254 | 2001 |
Process for bonding crystalline substrates with different crystal lattices BF Levine, CJ Pinzone US Patent 5,966,622, 1999 | 110 | 1999 |
Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates JP Van der Ziel, RD Dupuis, RA Logan, CJ Pinzone Applied physics letters 51 (2), 89-91, 1987 | 101 | 1987 |
Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates JP Van der Ziel, RD Dupuis, RA Logan, RM Mikulyak, CJ Pinzone, ... Applied physics letters 50 (8), 454-456, 1987 | 67 | 1987 |
Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition RD Dupuis, JP Van der Ziel, RA Logan, JM Brown, CJ Pinzone Applied physics letters 50 (7), 407-409, 1987 | 54 | 1987 |
Homogeneous photonic integration of mid-infrared quantum cascade lasers with low-loss passive waveguides on an InP platform S Jung, D Palaferri, K Zhang, F Xie, Y Okuno, C Pinzone, K Lascola, ... Optica 6 (8), 1023-1030, 2019 | 42 | 2019 |
Controlled spontaneous emission in room‐temperature semiconductor microcavities DL Huffaker, C Lei, DG Deppe, CJ Pinzone, JG Neff, RD Dupuis Applied Physics Letters 60 (26), 3203-3205, 1992 | 36 | 1992 |
Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors BF Levine, CJ Pinzone, S Hui, CA King, RE Leibenguth, DR Zolnowski, ... Applied physics letters 75 (14), 2141-2143, 1999 | 30 | 1999 |
Quarter‐wave Bragg reflector stack of InP‐In0.53Ga0.47As for 1.65 μm wavelength DG Deppe, ND Gerrard, CJ Pinzone, RD Dupuis, EF Schubert Applied physics letters 56 (4), 315-317, 1990 | 30 | 1990 |
Method for attractive bonding of two crystalline substrates SP Hui, BF Levine, CJ Pinzone, GA Thomas US Patent 6,187,653, 2001 | 27 | 2001 |
Heavily‐doped n‐type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin CJ Pinzone, ND Gerrard, RD Dupuis, NT Ha, HS Luftman Journal of applied physics 67 (11), 6823-6829, 1990 | 26 | 1990 |
Room‐temperature photopumped operation of an InGaAs‐InP vertical cavity surface‐emitting laser DG Deppe, S Singh, RD Dupuis, ND Gerrard, GJ Zydzik, JP van der Ziel, ... Applied physics letters 56 (22), 2172-2174, 1990 | 23 | 1990 |
Spectral and intensity dependence on dipole localization in Fabry–Perot cavities Z Huang, C Lei, DG Deppe, CC Lin, CJ Pinzone, RD Dupuis Applied physics letters 61 (25), 2961-2963, 1992 | 18 | 1992 |
Phenomenology of Zn diffusion and incorporation in InP grown by organometallic vapor‐phase epitaxy (OMVPE) EF Schubert, CJ Pinzone, M Geva Applied physics letters 67 (5), 700-702, 1995 | 16 | 1995 |
Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition RD Dupuis, JG Neff, CJ Pinzone Journal of crystal growth 124 (1-4), 558-564, 1992 | 15 | 1992 |
The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition RD Dupuis, CJ Pinzone Journal of Crystal Growth 93 (1-4), 434-442, 1988 | 14 | 1988 |
Triple-mesa avalanche photodiodes with very low surface dark current Y Yuan, Y Li, J Abell, JY Zheng, K Sun, C Pinzone, JC Campbell Optics Express 27 (16), 22923-22929, 2019 | 13 | 2019 |
Very high current gain InGaAs/InP heterojunction bipolar transistors grown by metalorganic chemical vapour deposition CS Kyono, ND Gerrard, CJ Pinzone, CM Maziar, RD Dupuis Electronics Letters 27 (1), 40-41, 1991 | 13 | 1991 |
In0. 47Ga0. 53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength RD Dupuis, DG Deppe, CJ Pinzone, ND Gerrard, S Singh, GJ Zydzik, ... Journal of crystal growth 107 (1-4), 790-795, 1991 | 12 | 1991 |
Spectral interference effects in the light emission from Fabry–Perot cavities C Lei, Z Huang, DG Deppe, CJ Pinzone, RD Dupuis Journal of applied physics 73 (6), 2700-2704, 1993 | 10 | 1993 |