Leelaprasanna Mandalapu Jayaramulu
Leelaprasanna Mandalapu Jayaramulu
Senior Staff Engineer - Product Development, Solaria Corporation
Verified email at solaria.com
Title
Cited by
Cited by
Year
Carbon ARC Generation of C60
RE Haufler, Y Chai, LPF Chibante, J Conceicao, C Jin, LS Wang, ...
MRS Online Proceedings Library Archive 206, 1990
471*1990
High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu, WP Beyermann
Applied Physics Letters 87 (15), 152101-152101-3, 2005
3802005
Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy
FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu
Applied Physics Letters 87 (25), 252102-252102-3, 2005
2422005
p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
FX Xiu, Z Yang, LJ Mandalapu, JL Liu, WP Beyermann
Applied physics letters 88 (5), 052106-052106-3, 2006
1682006
Sb-doped -doped homojunction ultraviolet light emitting diodes
S Chu, JH Lim, LJ Mandalapu, Z Yang, L Li, JL Liu
Applied Physics Letters 92 (15), 152103, 2008
1622008
Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection
LJ Mandalapu, Z Yang, FX Xiu, DT Zhao, JL Liu
Applied Physics Letters 88 (9), 092103-092103-3, 2006
1542006
Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes
LJ Mandalapu, Z Yang, S Chu, JL Liu
Applied Physics Letters 92 (12), 122101-122101-3, 2008
1192008
Donor and acceptor competitions in phosphorus-doped ZnO
FX Xiu, Z Yang, LJ Mandalapu, JL Liu
Applied Physics Letters 88 (15), 152116, 2006
1152006
L Liu
LJ Mandalapu, FX Xiu, Z Yang, DTJ Zhao
Appl. Phys. Lett. 88, 112108, 2006
1062006
Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
LJ Mandalapu, FX Xiu, Z Yang, JL Liu
Solid-state electronics 51 (7), 1014-1017, 2007
892007
p-type behavior from Sb-doped ZnO heterojunction photodiodes
LJ Mandalapu, FX Xiu, Z Yang, DT Zhao, JL Liu
Applied physics letters 88 (11), 112108-112108-3, 2006
502006
Bi-induced acceptor states in ZnO by molecular-beam epitaxy
FX Xiu, LJ Mandalapu, Z Yang, JL Liu, GF Liu, JA Yarmoff
Applied Physics Letters 89 (5), 052103, 2006
432006
Al/Ti contacts to Sb-doped p-type ZnO
LJ Mandalapu, FX Xiu, Z Yang, JL Liu
Journal of applied physics 102 (2), 023716-023716-5, 2007
402007
Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO
LJ Mandalapu, Z Yang, JL Liu
Applied physics letters 90 (25), 252103-252103-3, 2007
322007
Influence of electron injection on the photoresponse of ZnO homojunction diodes
O Lopatiuk-Tirpak, L Chernyak, LJ Mandalapu, Z Yang, JL Liu, ...
Applied physics letters 89 (14), 142114, 2006
322006
Influence of electron injection on the temporal response of ZnO homojunction photodiodes
O Lopatiuk-Tirpak, G Nootz, E Flitsiyan, L Chernyak, LJ Mandalapu, ...
Applied Physics Letters 91 (4), 042115, 2007
82007
P-type ZnO by Sb doping for PN-junction photodetectors
JL Liu, FX Xiu, LJ Mandalapu, Z Yang
Zinc Oxide Materials and Devices 6122, 61220H, 2006
82006
Characteristics of a phosphorus-doped p-type ZnO film by MBE
F Xiu, Z Yang, MJ Leelaprasanna, J Liu
MRS Online Proceedings Library Archive 892, 2005
42005
UV photoconductors based on Ga-doped ZnO films
LJ Mandalapu, F Xiu, Z Yang, J Liu
MRS Online Proceedings Library Archive 891, 2005
32005
Sb-doped p-type ZnO and its application on light emitting devices
S Chu, LJ Leela, Z Yang, JH Lim, L Li, J Liu
APS, J35. 010, 2008
2008
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