| Electronics based on two-dimensional materials G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ... Nature nanotechnology 9 (10), 768-779, 2014 | 2497 | 2014 |
| Integrated Circuits Based on Bilayer MoS2 Transistors H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ... Nano letters 12 (9), 4674-4680, 2012 | 1738 | 2012 |
| Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Hofmann, D Nezich, ... Nano letters 12 (1), 161-166, 2012 | 1157 | 2012 |
| Carbon-nanotube-embedded hydrogel sheets for engineering cardiac constructs and bioactuators SR Shin, SM Jung, M Zalabany, K Kim, P Zorlutuna, S Kim, M Nikkhah, ... ACS nano 7 (3), 2369-2380, 2013 | 743 | 2013 |
| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 699 | 2018 |
| Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces YH Lee, L Yu, H Wang, W Fang, X Ling, Y Shi, CT Lin, JK Huang, ... Nano letters 13 (4), 1852-1857, 2013 | 675 | 2013 |
| Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ... Nano letters 14 (6), 3055-3063, 2014 | 576 | 2014 |
| Dielectric Screening of Excitons and Trions in Single-Layer MoS2 Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ... Nano letters 14 (10), 5569-5576, 2014 | 542 | 2014 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron Device Letters 26 (11), 781-783, 2005 | 531 | 2005 |
| Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Dresselhaus, T Palacios, J Kong ACS nano 6 (10), 8583-8590, 2012 | 496 | 2012 |
| AlGaN/GaN high electron mobility transistors with InGaN back-barriers T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra IEEE Electron device letters 27 (1), 13-15, 2005 | 455 | 2005 |
| Graphene frequency multipliers H Wang, D Nezich, J Kong, T Palacios IEEE Electron Device Letters 30 (5), 547-549, 2009 | 424 | 2009 |
| AlGaN/GaN HEMT With 300-GHz fmax JW Chung, WE Hoke, EM Chumbes, T Palacios Electron Device Letters, IEEE 31 (3), 195-197, 2010 | 410 | 2010 |
| Role of interfacial oxide in high-efficiency graphene–silicon Schottky barrier solar cells Y Song, X Li, C Mackin, X Zhang, W Fang, T Palacios, H Zhu, J Kong Nano letters 15 (3), 2104-2110, 2015 | 408 | 2015 |
| Synthesis of large-area multilayer hexagonal boron nitride for high material performance SM Kim, A Hsu, MH Park, SH Chae, SJ Yun, JS Lee, DH Cho, W Fang, ... Nature communications 6 (1), 1-11, 2015 | 395 | 2015 |
| Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios Nano letters 16 (2), 1359-1366, 2016 | 372 | 2016 |
| MoS2 Field-Effect Transistor with Sub-10 nm Channel Length A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ... Nano letters 16 (12), 7798-7806, 2016 | 330 | 2016 |
| Graphene-based ambipolar RF mixers H Wang, A Hsu, J Wu, J Kong, T Palacios IEEE Electron Device Letters 31 (9), 906-908, 2010 | 301 | 2010 |
| Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2 L Zhou, K Xu, A Zubair, AD Liao, W Fang, F Ouyang, YH Lee, K Ueno, ... Journal of the American Chemical Society 137 (37), 11892-11895, 2015 | 295 | 2015 |
| 300-ghz inaln/gan hemts with ingan back barrier DS Lee, X Gao, S Guo, D Kopp, P Fay, T Palacios IEEE Electron Device Letters 32 (11), 1525-1527, 2011 | 280 | 2011 |
Han WangUSC, TSMCVerified email at usc.edu
