Zheng Yang
Title
Cited by
Cited by
Year
Oxide electronics utilizing ultrafast metal-insulator transitions
Z Yang, C Ko, S Ramanathan
Annual Review of Materials Research 41, 337-367, 2011
7432011
Ultra-thin perfect absorber employing a tunable phase change material
MA Kats, D Sharma, J Lin, P Genevet, R Blanchard, Z Yang, ...
Applied Physics Letters 101 (22), 221101, 2012
4602012
High-mobility Sb-doped -type ZnO by molecular-beam epitaxy
FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu, WP Beyermann
Applied Physics Letters 87 (15), 152101, 2005
3802005
Electrically pumped ultraviolet ZnO diode lasers on Si
S Chu, M Olmedo, Z Yang, J Kong, J Liu
Applied Physics Letters 93 (18), 181106, 2008
3302008
Photoluminescence study of Sb-doped -type ZnO films by molecular-beam epitaxy
FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu
Applied Physics Letters 87 (25), 252102, 2005
2422005
Voltage-triggered ultrafast phase transition in vanadium dioxide switches
Y Zhou, X Chen, C Ko, Z Yang, C Mouli, S Ramanathan
IEEE Electron Device Letters 34 (2), 220-222, 2013
2042013
Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material
MA Kats, R Blanchard, P Genevet, Z Yang, MM Qazilbash, DN Basov, ...
Optics letters 38 (3), 368-370, 2013
1712013
p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
FX Xiu, Z Yang, LJ Mandalapu, JL Liu, WP Beyermann
Applied physics letters 88 (5), 052106, 2006
1682006
Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes
S Chu, JH Lim, LJ Mandalapu, Z Yang, L Li, JL Liu
Applied Physics Letters 92 (15), 152103, 2008
1622008
Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection
LJ Mandalapu, Z Yang, FX Xiu, DT Zhao, JL Liu
Applied physics letters 88 (9), 092103, 2006
1542006
Na-doped p-type ZnO microwires
W Liu, F Xiu, K Sun, YH Xie, KL Wang, Y Wang, J Zou, Z Yang, J Liu
Journal of the American Chemical Society 132 (8), 2498-2499, 2010
1222010
Ultraviolet emission from Sb-doped -type ZnO based heterojunction light-emitting diodes
LJ Mandalapu, Z Yang, S Chu, JL Liu
Applied Physics Letters 92 (12), 122101, 2008
1192008
Donor and acceptor competitions in phosphorus-doped ZnO
FX Xiu, Z Yang, LJ Mandalapu, JL Liu
Applied Physics Letters 88 (15), 152116, 2006
1152006
Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry
C Ko, Z Yang, S Ramanathan
ACS applied materials & interfaces 3 (9), 3396-3401, 2011
1092011
Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devices
Z Yang, C Ko, V Balakrishnan, G Gopalakrishnan, S Ramanathan
Physical Review B 82 (20), 205101, 2010
1082010
Metal-insulator transition characteristics of VO thin films grown on Ge (100) single crystals
Z Yang, C Ko, S Ramanathan
Journal of Applied Physics 108, 073708, 2010
1042010
Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
LJ Mandalapu, FX Xiu, Z Yang, JL Liu
Solid-state electronics 51 (7), 1014-1017, 2007
892007
ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE
F Xiu, Z Yang, D Zhao, J Liu, KA Alim, AA Balandin, ME Itkis, RC Haddon
Journal of Crystal Growth 286 (1), 61-65, 2006
802006
Studies on room-temperature electric-field effect in ionic-liquid gated VO2 three-terminal devices
Z Yang, Y Zhou, S Ramanathan
Journal of Applied Physics 111 (1), 014506, 2012
672012
Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K
Z Yang, S Hart, C Ko, A Yacoby, S Ramanathan
Journal of Applied Physics 110 (3), 033725, 2011
622011
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