| Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ... Semiconductor Science and Technology 29 (11), 113001, 2014 | 236 | 2014 |
| Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury IEEE Transactions on Electron Devices 64 (3), 805-808, 2016 | 102 | 2016 |
| Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ... IEEE Electron Device Letters 38 (7), 933-936, 2017 | 52 | 2017 |
| N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax D Denninghoff, J Lu, M Laurent, E Ahmadi, S Keller, UK Mishra 70th Device Research Conference, 151-152, 2012 | 42 | 2012 |
| Barrier height inhomogeneity and its impact on (Al, In, Ga) N Schottky diodes MA Laurent, G Gupta, DJ Suntrup, SP DenBaars, UK Mishra Journal of Applied Physics 119 (6), 2016 | 36 | 2016 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 2013 | 35 | 2013 |
| Demonstration of GaN static induction transistor (SIT) using self-aligned process W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017 | 34 | 2017 |
| Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ... Applied Physics Letters 102 (23), 2013 | 29 | 2013 |
| A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN M Malakoutian, MA Laurent, S Chowdhury Crystals 9 (10), 498, 2019 | 27 | 2019 |
| Observation and discussion of avalanche electroluminescence in GaN pn diodes offering a breakdown electric field of 3 MV cm− 1 S Mandal, MB Kanathila, CD Pynn, W Li, J Gao, T Margalith, MA Laurent, ... Semiconductor Science and Technology 33 (6), 065013, 2018 | 21 | 2018 |
| Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors G Gupta, M Laurent, J Lu, S Keller, UK Mishra Applied Physics Express 7 (1), 014102, 2013 | 20 | 2013 |
| A demonstration of nitrogen polar gallium nitride current aperture vertical electron transistor S Rajabi, S Mandal, B Ercan, H Li, MA Laurent, S Keller, S Chowdhury IEEE Electron Device Letters 40 (6), 885-888, 2019 | 19 | 2019 |
| A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN MA Laurent, M Malakoutian, S Chowdhury Semiconductor Science and Technology 35 (1), 015003, 2019 | 18 | 2019 |
| Comprehensive analysis of surface morphology and growth mode of AlInGaN films MA Laurent, S Keller, UK Mishra physica status solidi (a) 216 (1), 1800523, 2019 | 18 | 2019 |
| Analysis of Vegard’s law for lattice matching InxAl1− xN to GaN by metalorganic chemical vapor deposition HM Foronda, B Mazumder, EC Young, MA Laurent, Y Li, SP DenBaars, ... Journal of Crystal Growth 475, 127-135, 2017 | 15 | 2017 |
| First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, MA Laurent, S Keller, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 12 | 2017 |
| Polarization induced three-dimensional hole gas in compositionally graded InxGa1− xN layer Y Enatsu, C Gupta, M Laurent, S Keller, S Nakamura, UK Mishra Applied Physics Express 9 (7), 075502, 2016 | 11 | 2016 |
| Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers G Gupta, M Laurent, H Li, DJ Suntrup, E Acuna, S Keller, UK Mishra IEEE Electron Device Letters 36 (1), 23-25, 2014 | 11 | 2014 |
| Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain J Kim, MA Laurent, H Li, S Lal, UK Mishra Applied Physics Letters 106 (2), 2015 | 10 | 2015 |
| Extraction of net interfacial polarization charge from Al0. 54In0. 12Ga0. 34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition MA Laurent, G Gupta, S Wienecke, AA Muqtadir, S Keller, SP DenBaars, ... Journal of Applied Physics 116 (18), 2014 | 7 | 2014 |
Geetak GuptaRenesas ElectronicsVerified email at renesas.com
