Mvs Chandrashekhar
Mvs Chandrashekhar
بريد إلكتروني تم التحقق منه على cec.sc.edu - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Measurement of ultrafast carrier dynamics in epitaxial graphene
JM Dawlaty, S Shivaraman, M Chandrashekhar, F Rana, MG Spencer
Applied Physics Letters 92 (4), 042116, 2008
8182008
Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene
PA George, J Strait, J Dawlaty, S Shivaraman, M Chandrashekhar, ...
Nano letters 8 (12), 4248-4251, 2008
6852008
Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene
PA George, J Strait, J Dawlaty, S Shivaraman, M Chandrashekhar, ...
Nano letters 8 (12), 4248-4251, 2008
6852008
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible
JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ...
Applied Physics Letters 93 (13), 131905, 2008
5462008
Ultrafast relaxation dynamics of hot optical phonons in graphene
H Wang, JH Strait, PA George, S Shivaraman, VB Shields, ...
Applied Physics Letters 96 (8), 081917, 2010
3022010
Polarization effects in semiconductors: from ab initio theory to device applications
C Wood, D Jena
Springer Science & Business Media, 2007
2952007
Free-standing epitaxial graphene
S Shivaraman, RA Barton, X Yu, J Alden, L Herman, ...
Nano letters 9 (9), 3100-3105, 2009
2492009
Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene
F Rana, PA George, JH Strait, J Dawlaty, S Shivaraman, ...
Physical Review B 79 (11), 115447, 2009
2372009
Demonstration of a 4H SiC betavoltaic cell
MVS Chandrashekhar, CI Thomas, H Li, MG Spencer, A Lal
Applied Physics Letters 88 (3), 033506, 2006
1882006
Comparison of GaN HEMTs on diamond and SiC substrates
JG Felbinger, MVS Chandra, Y Sun, LF Eastman, J Wasserbauer, F Faili, ...
IEEE Electron Device Letters 28 (11), 948-950, 2007
1642007
Thickness estimation of epitaxial graphene on SiC using attenuation of substrate Raman intensity
S Shivaraman, MVS Chandrashekhar, JJ Boeckl, MG Spencer
Journal of electronic materials 38 (6), 725-730, 2009
1562009
Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity
NBS Ekaterina A. Dolgopolova, Amy J. Brandt, Otega A. Ejegbavwo, Audrey S ...
Journal of the American Chemical Society 139 (14), 5201-5209, 2017
1152017
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
C Coletti, S Forti, A Principi, KV Emtsev, AA Zakharov, KM Daniels, ...
Physical Review B 88 (15), 155439, 2013
1002013
Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ...
Nanotechnology 17 (5), 1264, 2006
902006
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
I Chowdhury, MVS Chandrasekhar, PB Klein, JD Caldwell, T Sudarshan
Journal of Crystal Growth 316 (1), 60-66, 2011
562011
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
S Muhtadi, SM Hwang, A Coleman, F Asif, G Simin, MVS Chandrashekhar, ...
IEEE Electron Device Letters 38 (7), 914-917, 2017
452017
Betavoltaic cell
MVS Chandrashekhar, CI Thomas, MG Spencer
US Patent 7,663,288, 2010
432010
Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: on the growth of multilayer films
BK Daas, SU Omar, S Shetu, KM Daniels, S Ma, TS Sudarshan, ...
Crystal growth & design 12 (7), 3379-3387, 2012
412012
Emission of terahertz radiation from SiC
JH Strait, PA George, J Dawlaty, S Shivaraman, M Chandrashekhar, ...
Applied Physics Letters 95 (5), 051912, 2009
372009
Polariton enhanced infrared reflection of epitaxial graphene
BK Daas, KM Daniels, TS Sudarshan, MVS Chandrashekhar
Journal of applied physics 110 (11), 113114, 2011
362011
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مقالات 1–20