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Graphene epitaxy by chemical vapor deposition on SiC W Strupinski, K Grodecki, A Wysmolek, R Stepniewski, T Szkopek, ... Nano letters 11 (4), 1786-1791, 2011 | 411 | 2011 |
Exciton region reflectance of homoepitaxial GaN layers KP Korona, A Wysmol/ek, K Pakul/a, R Stepniewski, JM Baranowski, ... Applied physics letters 69 (6), 788-790, 1996 | 202 | 1996 |
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ... Solid state communications 97 (11), 919-922, 1996 | 177 | 1996 |
Polariton effects in reflectance and emission spectra of homoepitaxial GaN R Stȩpniewski, KP Korona, A Wysmołek, JM Baranowski, K Pakuła, ... Physical Review B 56 (23), 15151, 1997 | 119* | 1997 |
Auger recombination within Landau levels in a two-dimensional electron gas M Potemski, R Stepniewski, JC Maan, G Martinez, P Wyder, B Etienne Physical review letters 66 (17), 2239, 1991 | 87 | 1991 |
Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC (0001) J Borysiuk, R Bożek, W Strupiński, A Wysmołek, K Grodecki, ... Journal of Applied Physics 105 (2), 2009 | 80 | 2009 |
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN A Wysmolek, KP Korona, R Stȩpniewski, JM Baranowski, J Błoniarz, ... Physical Review B 66 (24), 245317, 2002 | 72 | 2002 |
Symmetry of excitons in GaN R Stȩpniewski, M Potemski, A Wysmołek, K Pakuła, JM Baranowski, ... Physical Review B 60 (7), 4438, 1999 | 68 | 1999 |
Quasiclassical cyclotron resonance of Dirac fermions in highly doped graphene AM Witowski, M Orlita, R Stȩpniewski, A Wysmołek, JM Baranowski, ... Physical Review B—Condensed Matter and Materials Physics 82 (16), 165305, 2010 | 67 | 2010 |
The chemical vapour transport growth of ZnO single crystals A Mycielski, L Kowalczyk, A Szadkowski, B Chwalisz, A Wysmołek, ... Journal of alloys and compounds 371 (1-2), 150-152, 2004 | 67 | 2004 |
Role of structure of C-terminated -SiC() surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies J Borysiuk, J Sołtys, R Bożek, J Piechota, S Krukowski, W Strupiński, ... Physical Review B—Condensed Matter and Materials Physics 85 (4), 045426, 2012 | 53 | 2012 |
Growth kinetics of epitaxial graphene on SiC substrates A Drabińska, K Grodecki, W Strupiński, R Bożek, KP Korona, A Wysmołek, ... Physical Review B—Condensed Matter and Materials Physics 81 (24), 245410, 2010 | 47 | 2010 |
Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC J Borysiuk, R Bożek, K Grodecki, A Wysmołek, W Strupiński, ... Journal of Applied Physics 108 (1), 2010 | 45 | 2010 |
Structural and optical properties of homoepitaxial GaN layers JM Baranowski, Z Liliental-Weber, K Korona, K Pakuła, R Stępniewski, ... MRS Online Proceedings Library (OPL) 449, 393, 1996 | 37 | 1996 |
Electronic structure of commensurate, nearly commensurate, and incommensurate phases of by angle-resolved photoelectron spectroscopy, scanning … I Lutsyk, M Rogala, P Dabrowski, P Krukowski, PJ Kowalczyk, ... Physical Review B 98 (19), 195425, 2018 | 36 | 2018 |
Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001) M Tokarczyk, G Kowalski, M Możdżonek, J Borysiuk, R Stępniewski, ... Applied Physics Letters 103 (24), 2013 | 36 | 2013 |
Fine structure of effective mass acceptors in gallium nitride R Stȩpniewski, A Wysmołek, M Potemski, K Pakuła, JM Baranowski, ... Physical review letters 91 (22), 226404, 2003 | 35 | 2003 |
Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface K Grodecki, R Bozek, W Strupinski, A Wysmolek, R Stepniewski, ... Applied Physics Letters 100 (26), 2012 | 33 | 2012 |
Impurity‐Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields R Stepniewski, A Wysmolek, M Potemski, J Lusakowski, J Lusakowski, ... physica status solidi (b) 210 (2), 373-383, 1998 | 33 | 1998 |