متابعة
Matthew T. Hardy
Matthew T. Hardy
Electronics Science and Technology Division, Naval Research Laboratory
بريد إلكتروني تم التحقق منه على nrl.navy.mil
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
High-resolution electrohydrodynamic jet printing‏
JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ...‏
Nature materials 6 (10), 782-789, 2007‏
16382007
Superluminescent diodes by crystallographic etching‏
MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ...‏
US Patent App. 12/913,638, 2011‏
2522011
Group III-nitride lasers: a materials perspective‏
MT Hardy, DF Feezell, SP DenBaars, S Nakamura‏
Materials Today 14 (9), 408-415, 2011‏
1862011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates‏
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer‏
Applied Physics Letters 110 (16), 2017‏
1222017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm‏
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...‏
1212010
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate‏
YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ...‏
Applied physics express 2 (8), 082102, 2009‏
792009
444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer‏
P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ...‏
Applied Physics Letters 100 (2), 2012‏
772012
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers‏
IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ...‏
Applied Physics Letters 101 (12), 2012‏
642012
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding‏
KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ...‏
Applied Physics Express 2 (7), 071003, 2009‏
602009
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes‏
MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ...‏
Applied Physics Letters 103 (8), 2013‏
592013
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates‏
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...‏
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016‏
552016
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy‏
PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ...‏
APPLIED PHYSICS LETTERS 100, 171917, 2012‏
532012
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells‏
CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ...‏
Applied Physics Letters 99 (24), 2011‏
532011
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates‏
A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ...‏
Applied Physics Letters 103 (15), 2013‏
512013
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures‏
MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ...‏
Applied Physics Letters 100 (20), 202103-202103-4, 2012‏
502012
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates‏
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...‏
Applied Physics Express 8 (8), 085501, 2015‏
492015
m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching‏
MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ...‏
Applied Physics Express 2 (12), 121004, 2009‏
482009
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy‏
MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...‏
Applied Physics Express 13 (6), 065509, 2020‏
472020
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates‏
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...‏
Journal of Crystal Growth 456, 121-132, 2016‏
432016
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy‏
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...‏
Journal of Vacuum Science & Technology A 38 (6), 2020‏
422020
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مقالات 1–20