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Hamed mosalam
Hamed mosalam
Southern University of Science and Technology
Verified email at sustech.edu.cn
Title
Cited by
Cited by
Year
High Efficiency and Small Group Delay Variations 0.18- m CMOS UWB Power Amplifier
H Mosalam, A Allam, H Jia, AB Abdel-Rahman, RK Pokharel
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (4), 592-596, 2018
232018
22-GHz-Band Oscillator Using Integrated H-Shape Defected Ground Structure Resonator in 0.18- CMOS Technology
N Jahan, SAE Ab Rahim, H Mosalam, A Barakat, T Kaho, RK Pokharel
IEEE Microwave and Wireless Components Letters 28 (3), 233-235, 2018
152018
5.0 to 10.6 GHz 0.18 µm CMOS power amplifier with excellent group delay for UWB applications
H Mosalam, A Allam, H Jia, A Abdelrahman, T Kaho, RK Pokharel
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
142015
K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor
I Mansour, H Mosalam, A Allam, AB Abdel-Rahman, RK Pokharel
2016 IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB), 1-4, 2016
102016
A 12 to 24 GHz high efficiency fully integrated 0.18 µm CMOS power amplifier
H Mosalam, A Allam, H Jia, A Abdelrahman, T Kaho, R Pokharel
IEICE Electronics Express 13 (14), 20160551-20160551, 2016
82016
A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology
H Mosalam, A Allam, A Abdel-Rahman, T Kaho, H Jia, RK Pokharel
2016 IEEE 59th International Midwest Symposium on Circuits and Systems …, 2016
62016
A 5–9 GHz CMOS Ultra-wideband power amplifier design using load-pull
H Mosalam, A Allam, H Jia, R Pokharel, M Ragab, K Yoshida
2013 IEEE 20th International Conference on Electronics, Circuits, and …, 2013
52013
A high efficiency 3–7 GHz class AB CMOS power amplifier for WBAN applications
A Gadallah, A Allam, H Mosalam, AB Abdel-Rahman, H Jia, RK Pokharel
2015 IEEE International Symposium on Radio-Frequency Integration Technology …, 2015
42015
A 19–48.3-GHz 6th-Order Transformer-Based Injection-Locked Frequency Divider With 87.1% Locking Range in 40-nm CMOS
J Zhu, Q Jiang, H Mosalam, C Zhan, Q Pan
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (9), 3053-3057, 2021
32021
High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications
H Mosalam, A Gadallah
International Journal of Electrical and Computer Engineering Systems 12 (3 …, 2021
22021
A 57–100 GHz 0.13 μm SiGe power amplifier with high output power and efficiency
H Mosalam, Q Pan
Microelectronics Journal 114, 105128, 2021
22021
A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS
H Mosalam, W Xiao, Q Pan
AEU-International Journal of Electronics and Communications 137, 153824, 2021
22021
A 50 - 90 GHz High Efficiency Fully integrated Si Ge Power Amplifier
H Mosalam, M Rizk, M Kamal, HH Abdullah
2019 31st International Conference on Microelectronics (ICM), 74-77, 2019
22019
A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS
H Mosalam, W Xiao, X Gui, D Li, Q Pan
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (1), 40-44, 2021
12021
A 6.15–10.9 Gb/s 0.58 pJ/Bit Reference-Less Half-Rate Clock and Data Recovery With “Phase Reset” Scheme
W Xiao, Q Huang, H Mosalam, C Zhan, Z Li, Q Pan
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (2), 634-644, 2021
2021
Design of Low Power Class-C Voltage Controlled Oscillator Using 0.13 µm SiGe BiCMOS for K-band Applications
H Mosalam, A Musa, M Kamal, HH Abdullah
2019 Photonics & Electromagnetics Research Symposium-Fall (PIERS-Fall), 2853 …, 2019
2019
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