| High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... ACS nano 6 (9), 8166-8172, 2012 | 166 | 2012 |
| Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang IEEE Electron Device Letters 36 (1), 32-34, 2014 | 144 | 2014 |
| Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... 2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012 | 122 | 2012 |
| Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang Applied Physics Letters 108 (15), 2016 | 106 | 2016 |
| Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012 | 97 | 2012 |
| Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 89 | 2013 |
| Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application J Park, T Hadamek, AB Posadas, E Cha, AA Demkov, H Hwang Scientific reports 7 (1), 4068, 2017 | 85 | 2017 |
| Complementary resistive switching in niobium oxide-based resistive memory devices X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang IEEE electron device letters 34 (2), 235-237, 2013 | 67 | 2013 |
| Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector J Park, E Cha, I Karpov, H Hwang Applied Physics Letters 108 (23), 2016 | 49 | 2016 |
| High density neuromorphic system with Mo/Pr0. 7Ca0. 3MnO3 synapse and NbO2 IMT oscillator neuron K Moon, E Cha, J Park, S Gi, M Chu, K Baek, B Lee, S Oh, H Hwang 2015 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2015 | 49 | 2015 |
| Bidirectional threshold switching in engineered multilayer (Cu2O/Ag: Cu2O/Cu2O) stack for cross-point selector application J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang Applied Physics Letters 107 (11), 2015 | 48 | 2015 |
| Analog synapse device with 5-b MLC and improved data retention for neuromorphic system K Moon, E Cha, J Park, S Gi, M Chu, K Baek, B Lee, SH Oh, H Hwang IEEE Electron Device Letters 37 (8), 1067-1070, 2016 | 46 | 2016 |
| Hardware implementation of associative memory characteristics with analogue-type resistive-switching device K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ... Nanotechnology 25 (49), 495204, 2014 | 46 | 2014 |
| Effects of RESET current overshoot and resistance state on reliability of RRAM J Song, D Lee, J Woo, Y Koo, E Cha, S Lee, J Park, K Moon, SH Misha, ... IEEE electron device letters 35 (6), 636-638, 2014 | 46 | 2014 |
| Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory. D Lee, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, H Hwang Advanced Materials (Deerfield Beach, Fla.) 27 (1), 59-64, 2014 | 44 | 2014 |
| Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ... physica status solidi (a) 209 (6), 1179-1183, 2012 | 43 | 2012 |
| Quantized conductive filament formed by limited Cu source in sub-5nm era J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ... 2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011 | 43 | 2011 |
| Multi-layer tunnel barrier (Ta2O5/TaOx/TiO2) engineering for bipolar RRAM selector applications J Woo, W Lee, S Park, S Kim, D Lee, G Choi, E Cha, J hyun Lee, ... 2013 Symposium on VLSI Technology, T168-T169, 2013 | 38 | 2013 |
| Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications S Park, S Jung, M Siddik, M Jo, J Park, S Kim, W Lee, J Shin, D Lee, ... physica status solidi (RRL)–Rapid Research Letters 6 (11), 454-456, 2012 | 38 | 2012 |
| Control of Cu conductive filament in complementary atom switch for cross-point selector device application J Woo, D Lee, E Cha, S Lee, S Park, H Hwang IEEE electron device letters 35 (1), 60-62, 2013 | 35 | 2013 |
Hyunsang HwangPOSTECH, Koreaبريد إلكتروني تم التحقق منه على postech.ac.kr
