متابعة
Mikhail Gaevski
Mikhail Gaevski
CVD Equipment Corporation
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عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management‏
JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ...‏
Applied physics letters 80 (19), 3542-3544, 2002‏
2602002
Anisotropic structural characteristics of GaN templates and coalesced epitaxial lateral overgrown films deposited on sapphire‏
H Wang, C Chen, Z Gong, J Zhang, M Gaevski, M Su, J Yang, MA Khan‏
Applied physics letters 84 (4), 499-501, 2004‏
1952004
Polarization effects in photoluminescence of - and -plane GaN/AlGaN multiple quantum wells‏
E Kuokstis, CQ Chen, ME Gaevski, WH Sun, JW Yang, G Simin, ...‏
Applied Physics Letters 81 (22), 4130-4132, 2002‏
1582002
Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm‏
A Chitnis, J Sun, V Mandavilli, R Pachipulusu, S Wu, M Gaevski, ...‏
Applied Physics Letters 81 (18), 3491-3493, 2002‏
1522002
Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors‏
V Adivarahan, M Gaevski, WH Sun, H Fatima, A Koudymov, S Saygi, ...‏
IEEE Electron Device Letters 24 (9), 541-543, 2003‏
1072003
GaN homoepitaxy on freestanding oriented GaN substrates‏
CQ Chen, ME Gaevski, WH Sun, E Kuokstis, JP Zhang, RSQ Fareed, ...‏
Applied physics letters 81 (17), 3194-3196, 2002‏
1022002
Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates‏
Z Chen, RS Qhalid Fareed, M Gaevski, V Adivarahan, JW Yang, A Khan, ...‏
Applied physics letters 89 (8), 081905, 2006‏
992006
A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire‏
C Chen, J Zhang, J Yang, V Adivarahan, S Rai, S Wu, H Wang, W Sun, ...‏
Japanese journal of applied physics 42 (7B), L818, 2003‏
882003
Optical power degradation mechanisms in AlGaN-based deep ultraviolet light-emitting diodes on sapphire‏
Z Gong, M Gaevski, V Adivarahan, W Sun, M Shatalov, M Asif Khan‏
Applied physics letters 88 (12), 121106, 2006‏
782006
Room-temperature stimulated emission from AlN at 214 nm‏
M Shatalov, M Gaevski, V Adivarahan, A Khan‏
Japanese journal of applied physics 45 (12L), L1286, 2006‏
722006
AlGaN layers grown on GaN using strain-relief interlayers‏
CQ Chen, JP Zhang, ME Gaevski, HM Wang, WH Sun, RSQ Fareed, ...‏
Applied physics letters 81 (26), 4961-4963, 2002‏
712002
Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching‏
T James, YV Kalinin, CC Chan, JS Randhawa, M Gaevski, DH Gracias‏
Nano letters 12 (7), 3437-3442, 2012‏
682012
Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire‏
C Chen, J Yang, H Wang, J Zhang, V Adivarahan, M Gaevski, E Kuokstis, ...‏
Japanese journal of applied physics 42 (6B), L640, 2003‏
672003
Intrinsic microstrains and normal-phase flicker noise in epitaxial films grown on various substrates‏
AV Bobyl, ME Gaevski, SF Karmanenko, RN Kutt, RA Suris, IA Khrebtov, ...‏
Journal of applied physics 82 (3), 1274-1280, 1997‏
581997
Magneto-optical study of magnetic-flux penetration into a current-carrying high-temperature-superconductor strip‏
ME Gaevski, AV Bobyl, DV Shantsev, YM Galperin, TH Johansen, ...‏
Physical Review B 59 (14), 9655, 1999‏
551999
GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices‏
WH Sun, JW Yang, CQ Chen, JP Zhang, ME Gaevski, E Kuokstis, ...‏
Applied physics letters 83 (13), 2599-2601, 2003‏
522003
Electrical properties of two-dimensional fullerene matrices‏
TL Makarova, B Sundqvist, P Scharff, ME Gaevski, E Olsson, VA Davydov, ...‏
Carbon 39 (14), 2203-2209, 2001‏
402001
Technique to automatically measure electron-beam diameter and astigmatism: BEAMETR‏
S Babin, M Gaevski, D Joy, M Machin, A Martynov‏
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006‏
392006
Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate‏
A Chitnis, V Adivarahan, M Shatalov, J Zhang, M Gaevski, W Shuai, ...‏
Japanese journal of applied physics 41 (3B), L320, 2002‏
392002
Novel AlInN/GaN integrated circuits operating up to 500 C‏
R Gaska, M Gaevski, R Jain, J Deng, M Islam, G Simin, M Shur‏
Solid-State Electronics 113, 22-27, 2015‏
352015
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مقالات 1–20