| Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity S Jin, MV Fischetti, T Tang Journal of Applied Physics 102 (8), 083715, 2007 | 365 | 2007 |
| A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions S Jin, YJ Park, HS Min Journal of applied physics 99 (12), 123719, 2006 | 288 | 2006 |
| A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor MJ Lee, S Jin, CK Baek, SM Hong, SY Park, HH Park, SD Lee, SW Chung, ... IEEE Transactions on Electron Devices 54 (12), 3325-3335, 2007 | 248 | 2007 |
| Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs S Jin, MV Fischetti, TW Tang IEEE Transactions on Electron Devices 54 (9), 2191-2203, 2007 | 198 | 2007 |
| Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length MV Fischetti, TP O'Regan, S Narayanan, C Sachs, S Jin, J Kim, Y Zhang IEEE Transactions on Electron Devices 54 (9), 2116-2136, 2007 | 144 | 2007 |
| Simulation of silicon nanowire transistors using Boltzmann transport equation under relaxation time approximation S Jin, TW Tang, MV Fischetti IEEE Transactions on Electron Devices 55 (3), 727-736, 2008 | 117 | 2008 |
| Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model MV Fischetti, S Jin, TW Tang, P Asbeck, Y Taur, SE Laux, M Rodwell, ... Journal of computational electronics 8 (2), 60-77, 2009 | 97 | 2009 |
| Theoretical study of carrier transport in silicon nanowire transistors based on the multisubband Boltzmann transport equation S Jin, MV Fischetti, T Tang Electron Devices, IEEE Transactions on 55 (11), 2886-2897, 2008 | 56 | 2008 |
| Prediction of data retention time distribution of DRAM by physics-based statistical simulation S Jin, JH Yi, JH Choi, DG Kang, YJ Park, HS Min IEEE Transactions on electron devices 52 (11), 2422-2429, 2005 | 41 | 2005 |
| Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics TP O’Regan, MV Fischetti, B Sorée, S Jin, W Magnus, M Meuris Journal of Applied Physics 108 (10), 103705, 2010 | 40 | 2010 |
| Gate current calculations using spherical harmonic expansion of Boltzmann equation S Jin, A Wettstein, W Choi, FM Bufler, E Lyumkis International conference on simulation of semiconductor processes and …, 2009 | 33 | 2009 |
| Simulation of quantum effects in the nano-scale semiconductor device S Jin, YJ Park, HS Min Journal of Semiconductor Technology and Science 4 (1), 32-40, 2004 | 31 | 2004 |
| In 0.53 Ga 0.47 As-Based nMOSFET Design for Low Standby Power Applications KK Bhuwalka, Z Wu, HK Noh, W Lee, M Cantoro, YC Heo, S Jin, W Choi, ... IEEE Transactions on Electron Devices 62 (9), 2816-2823, 2015 | 30 | 2015 |
| An efficient approach to include full-band effects in deterministic Boltzmann equation solver based on high-order spherical harmonics expansion S Jin, SM Hong, C Jungemann IEEE Transactions on Electron Devices 58 (5), 1287-1294, 2011 | 30 | 2011 |
| Coupled Drift-Diffusion (DD) and Multi-Subband Boltzmann Transport Equation (MSBTE) Solver for 3D Multi-Gate Transistors S Jin, SM Hong, W Choi, KH Lee, Y Park International Conference on Simulation of Semiconductor Process and Devices …, 2013 | 22 | 2013 |
| Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband Boltzmann transport equations solver S Jin, AT Pham, W Choi, Y Nishizawa, YT Kim, KH Lee, Y Park, ES Jung 2014 IEEE International Electron Devices Meeting, 7.5. 1-7.5. 4, 2014 | 21 | 2014 |
| Modeling of retention time distribution of DRAM cell using a Monte-Carlo method S Jin, JH Yi, YJ Park, HS Min, JH Choi, DG Kang Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International …, 2004 | 20 | 2004 |
| Universality of Short-Channel Effects on Ultrascaled MOSFET Performance MA Pourghaderi, AT Pham, H Ilatikhameneh, J Kim, HH Park, S Jin, ... IEEE Electron Device Letters 39 (2), 168-171, 2018 | 19 | 2018 |
| Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions S Jin, MV Fischetti, T Tang Applied Physics Letters 92 (8), 082103, 2008 | 19 | 2008 |
| Quantum simulation of noise in silicon nanowire transistors with electron-phonon interactions HH Park, S Jin, YJ Park, HS Min Journal of Applied Physics 105 (2), 023712, 2009 | 18 | 2009 |
Massimo V FischettiThe University of Texas at Dallasبريد إلكتروني تم التحقق منه على utdallas.edu
