| Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ... Applied Physics Letters 109 (8), 2016 | 64 | 2016 |
| 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ... Applied physics letters 112 (3), 2018 | 49 | 2018 |
| Electroluminescence in Unipolar-Doped Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization ER Brown, WD Zhang, TA Growden, P Fakhimi, PR Berger Physical Review Applied 16 (5), 054008, 2021 | 8 | 2021 |
| Recess-type waveguide integrated germanium on silicon avalanche photodiode M Huang, K Magruder, Y Malinge, P Fakhimi, HH Liao, D Kohen, G Lovell, ... Optical Fiber Communication Conference, F2C. 3, 2021 | 6 | 2021 |
| Waveguide photodetectors for silicon photonic integrated circuits D Kohen, K Magruder, P Fakhimi, Z Li, C Tran, W Qian, M Isenberger, ... US Patent App. 17/358,921, 2022 | 2 | 2022 |
| New device physics of cross-gap electroluminescence in unipolar-doped InGaAs/AlAs RTDs P Fakhimi, WD Zhang, TA Growden, ER Brown, R Droopad, KM Hansen, ... 2019 Device Research Conference (DRC), 119-120, 2019 | 2 | 2019 |
| Time-resolved photoluminescence study of different Ge epitaxial growth schemes for Ge virtual substrates with reduced threading dislocation density P Fakhimi, C Porret, A Srinivasan, R Loo, P Berger | 2 | 2017 |
| Time-resolved Photoluminescence study of the material quality of Ge Virtual Substrates elaborated with different epitaxial growth schemes P Fakhimi, C Porret, A Srinivasan, R Loo, P Berger 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI …, 2017 | 2 | 2017 |
| Germanium on silicon avalanche photodiode for high-speed fiber communication M Huang, K Magruder, Y Malinge, P Fakhimi, HH Liao, D Kohen, G Lovell, ... Optical Fiber and Applications, 2022 | 1 | 2022 |
| RTD light emission around 1550 nm with IQE up to 6% at 300 K ER Brown, WD Zhang, P Fakhimi, TA Growden, PR Berger 2020 Device Research Conference (DRC), 1-2, 2020 | 1 | 2020 |
| Advanced CMOS and Quantum Tunneling Diodes: Materials, Experiment and Modeling P Fakhimi The Ohio State University, 2019 | | 2019 |
| Evaluation of different Ge epitaxial growth schemes for Ge VS with reduced TDD P Fakhimi, C Porret, R Loo, P Berger | | 2017 |
| ATLAS simulations of delta-doped Si/SiGe backward diodes P Fakhimi, T Growden, P Berger | | 2016 |
