متابعة
Parastou Fakhimi
Parastou Fakhimi
PhD Candidate, Ohio State University
بريد إلكتروني تم التحقق منه على osu.edu
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...
Applied Physics Letters 109 (8), 2016
642016
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...
Applied physics letters 112 (3), 2018
492018
Electroluminescence in Unipolar-Doped Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization
ER Brown, WD Zhang, TA Growden, P Fakhimi, PR Berger
Physical Review Applied 16 (5), 054008, 2021
82021
Recess-type waveguide integrated germanium on silicon avalanche photodiode
M Huang, K Magruder, Y Malinge, P Fakhimi, HH Liao, D Kohen, G Lovell, ...
Optical Fiber Communication Conference, F2C. 3, 2021
62021
Waveguide photodetectors for silicon photonic integrated circuits
D Kohen, K Magruder, P Fakhimi, Z Li, C Tran, W Qian, M Isenberger, ...
US Patent App. 17/358,921, 2022
22022
New device physics of cross-gap electroluminescence in unipolar-doped InGaAs/AlAs RTDs
P Fakhimi, WD Zhang, TA Growden, ER Brown, R Droopad, KM Hansen, ...
2019 Device Research Conference (DRC), 119-120, 2019
22019
Time-resolved photoluminescence study of different Ge epitaxial growth schemes for Ge virtual substrates with reduced threading dislocation density
P Fakhimi, C Porret, A Srinivasan, R Loo, P Berger
22017
Time-resolved Photoluminescence study of the material quality of Ge Virtual Substrates elaborated with different epitaxial growth schemes
P Fakhimi, C Porret, A Srinivasan, R Loo, P Berger
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI …, 2017
22017
Germanium on silicon avalanche photodiode for high-speed fiber communication
M Huang, K Magruder, Y Malinge, P Fakhimi, HH Liao, D Kohen, G Lovell, ...
Optical Fiber and Applications, 2022
12022
RTD light emission around 1550 nm with IQE up to 6% at 300 K
ER Brown, WD Zhang, P Fakhimi, TA Growden, PR Berger
2020 Device Research Conference (DRC), 1-2, 2020
12020
Advanced CMOS and Quantum Tunneling Diodes: Materials, Experiment and Modeling
P Fakhimi
The Ohio State University, 2019
2019
Evaluation of different Ge epitaxial growth schemes for Ge VS with reduced TDD
P Fakhimi, C Porret, R Loo, P Berger
2017
ATLAS simulations of delta-doped Si/SiGe backward diodes
P Fakhimi, T Growden, P Berger
2016
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مقالات 1–13