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Ivan Sanchez Esqueda
Ivan Sanchez Esqueda
Verified email at asu.edu - Homepage
Title
Cited by
Cited by
Year
Room‐temperature synthesis of 2D Janus crystals and their heterostructures
DB Trivedi, G Turgut, Y Qin, MY Sayyad, D Hajra, M Howell, L Liu, S Yang, ...
Advanced materials 32 (50), 2006320, 2020
1562020
Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing
I Sanchez Esqueda, X Yan, C Rutherglen, A Kane, T Cain, P Marsh, Q Liu, ...
ACS nano 12 (7), 7352-7361, 2018
1412018
High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
X Yan, IS Esqueda, J Ma, J Tice, H Wang
Applied Physics Letters 112 (3), 2018
1402018
Compact modeling of total ionizing dose and aging effects in MOS technologies
IS Esqueda, HJ Barnaby, MP King
IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015
1312015
Modeling ionizing radiation effects in solid state materials and CMOS devices
HJ Barnaby, ML McLain, IS Esqueda, XJ Chen
IEEE Transactions on Circuits and Systems I: Regular Papers 56 (8), 1870-1883, 2009
1292009
Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies
IS Esqueda, HJ Barnaby, ML Alles
IEEE transactions on nuclear science 52 (6), 2259-2264, 2005
1192005
Cross-layer modeling and simulation of circuit reliability
Y Cao, J Velamala, K Sutaria, MSW Chen, J Ahlbin, IS Esqueda, M Bajura, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013
802013
Total-ionizing-dose effects on isolation oxides in modern CMOS technologies
HJ Barnaby, M Mclain, IS Esqueda
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
652007
Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices
FE Mamouni, SK Dixit, RD Schrimpf, PC Adell, IS Esqueda, ML McLain, ...
IEEE Transactions on Nuclear Science 55 (6), 3259-3264, 2008
512008
Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors
IS Esqueda, HJ Barnaby, KE Holbert, F El-Mamouni, RD Schrimpf
IEEE Transactions on Nuclear Science 58 (2), 499-505, 2011
482011
Total ionizing dose induced charge carrier scattering in graphene devices
CD Cress, JG Champlain, IS Esqueda, JT Robinson, AL Friedman, ...
IEEE Transactions on Nuclear Science 59 (6), 3045-3053, 2012
462012
Modeling inter-device leakage in 90 nm bulk CMOS devices
IS Esqueda, HJ Barnaby, KE Holbert, Y Boulghassoul
IEEE Transactions on Nuclear Science 58 (3), 793-799, 2011
442011
Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity
IS Esqueda, HJ Barnaby, PC Adell
IEEE Transactions on Nuclear Science 59 (4), 701-706, 2012
422012
Modeling the radiation response of fully-depleted SOI n-channel MOSFETs
IS Esqueda, HJ Barnaby, ML McLain, PC Adell, FE Mamouni, SK Dixit, ...
IEEE Transactions on Nuclear Science 56 (4), 2247-2250, 2009
392009
Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors
ML McLain, HJ Barnaby, IS Esqueda, J Oder, B Vermeire
2009 IEEE International Reliability Physics Symposium, 174-179, 2009
342009
Modeling low dose rate effects in shallow trench isolation oxides
IS Esqueda, HJ Barnaby, PC Adell, BG Rax, HP Hjalmarson, ML McLain, ...
IEEE Transactions on Nuclear Science 58 (6), 2945-2952, 2011
312011
A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits
IS Esqueda, HJ Barnaby
Solid-State Electronics 91, 81-86, 2014
282014
Modeling the non-uniform distribution of radiation-induced interface traps
IS Esqueda, HJ Barnaby
IEEE Transactions on Nuclear Science 59 (4), 723-727, 2012
282012
Modeling of total ionizing dose effects in advanced complementary metal-oxide-semiconductor technologies
IS Esqueda
Arizona State University, 2011
252011
The viability of analog-based accelerators for neuromorphic computing: A survey
M Musisi-Nkambwe, S Afshari, H Barnaby, M Kozicki, IS Esqueda
Neuromorphic Computing and Engineering 1 (1), 012001, 2021
242021
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