| Direct-bandgap emission from hexagonal Ge and SiGe alloys EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ van Tilburg, C Mao, ... Nature 580 (7802), 205-209, 2020 | 170 | 2020 |
| Observation of Conductance Quantization in InSb Nanowire Networks EMT Fadaly, H Zhang, S Conesa-Boj, D Car, Ö Gül, SR Plissard, ... Nano Letters 17 (11), 6511–6515, 2017 | 33 | 2017 |
| Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1–x Alloys in Nanowires by Raman Spectroscopy D De Matteis, M De Luca, EMT Fadaly, MA Verheijen, M López-Suárez, ... ACS nano 14 (6), 6845-6856, 2020 | 14 | 2020 |
| InSb Nanowires with Built-In GaxIn1–xSb Tunnel Barriers for Majorana Devices D Car, S Conesa-Boj, H Zhang, RLM Op het Veld, MWA De Moor, ... Nano Letters 17 (2), 721-727, 2017 | 8 | 2017 |
| Unveiling Planar Defects in Hexagonal Group IV Materials EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ... Nano letters 21 (8), 3619-3625, 2021 | 6 | 2021 |
| Molecular Beam Epitaxy of Catalyst-Free InAs Nanowires on Si (111) E Fadaly Master thesis, Chalmers Institute of Technology, 2015, 2015 | 4 | 2015 |
| Light emission from direct bandgap hexagonal SiGe JEM Haverkort, Y Ren, A Dijkstra, E Fadaly, MA Verheijen, G Reithmaier, ... Integrated Photonics Research, Silicon and Nanophotonics, ITu4I. 5, 2018 | 3 | 2018 |
| Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation) D Busse, E Fadaly, VT van Lange, JR Suckert, A Dijkstra, M van Tilburg, ... Novel In-Plane Semiconductor Lasers XIX 11301, 113010K, 2020 | 1 | 2020 |
| Crossed InSb nanowire junctions for Majorana operations D Car, S Gazibegovic, S Balk, SC Boj, E Fadaly, H Zhang, R op het Veld, ... 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 1 | 2016 |
| Light-emitting or light-absorbing component S Botti, F Bechstedt, JEM Haverkort, EPAM Bakkers, E Fadaly, A Dijkstra US Patent App. 17/431,356, 2022 | | 2022 |
| Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H L Vincent, EMT Fadaly, C Renard, WHJ Peeters, M Vettori, F Panciera, ... Advanced Materials Interfaces, 2102340, 2022 | | 2022 |
| Efficient Light Emission from Hexagonal SiGe EMT Fadaly, JR Suckert, D Ziss, MAJ Tilburg, C Mao, Y Ren, VT Lange, ... 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | | 2021 |
| Epitaxy of Hexagonal SiGe Alloys for Light Emission EMT Fadaly Technische Universiteit Eindhoven, 2021 | | 2021 |
| Towards a Hexagonal SiGe Semiconductor Laser. M Tilburg, A Dijkstra, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ... CLEO: Science and Innovations, SM3M. 6, 2020 | | 2020 |
| Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. A Dijkstra, MAJ Tilburg, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ... CLEO: QELS_Fundamental Science, JW2F. 3, 2020 | | 2020 |
| Towards a Hexagonal SiGe Semiconductor Laser MAJ van Tilburg, A Dijkstra, EMT Fadaly, VT van Lange, MA Verheijen, ... 2020 Conference on Lasers and Electro-Optics, CLEO 2020, 9192798, 2020 | | 2020 |
| Light Emission from Direct Bandgap Hexagonal Silicon Germanium E Fadaly, A Dijkstra, JR Suckert, M Verheijen, S Koelling, J Finley, S Botti, ... APS March Meeting Abstracts 2019, S11. 015, 2019 | | 2019 |
| InAsSb Nanowires with Epitaxial Aluminum as a Platform for Topological Quantum Computation M Pendharkar, S Gazibegovic, J Logan, RO Veld, H Zhang, M Verheijen, ... MRS Society Fall 2017, 2017 | | 2017 |
| Fabrication of nanowire growth templates by forming pinholes in SiOxon Si HZ Ternehäll, E Fadaly, M Sadeghi 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | | 2016 |
| Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires E Fadaly, I Massiot, M Sadeghi, A Dmitriev, H Zhao 15th International Conference on Nanotechnology, 2015 | | 2015 |
Erik BakkersVerified email at tue.nl
