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Elham M. T. Fadaly
Elham M. T. Fadaly
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Cited by
Year
Direct-bandgap emission from hexagonal Ge and SiGe alloys
EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ van Tilburg, C Mao, ...
Nature 580 (7802), 205-209, 2020
1702020
Observation of Conductance Quantization in InSb Nanowire Networks
EMT Fadaly, H Zhang, S Conesa-Boj, D Car, Ö Gül, SR Plissard, ...
Nano Letters 17 (11), 6511–6515, 2017
332017
Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1–x Alloys in Nanowires by Raman Spectroscopy
D De Matteis, M De Luca, EMT Fadaly, MA Verheijen, M López-Suárez, ...
ACS nano 14 (6), 6845-6856, 2020
142020
InSb Nanowires with Built-In GaxIn1–xSb Tunnel Barriers for Majorana Devices
D Car, S Conesa-Boj, H Zhang, RLM Op het Veld, MWA De Moor, ...
Nano Letters 17 (2), 721-727, 2017
82017
Unveiling Planar Defects in Hexagonal Group IV Materials
EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ...
Nano letters 21 (8), 3619-3625, 2021
62021
Molecular Beam Epitaxy of Catalyst-Free InAs Nanowires on Si (111)
E Fadaly
Master thesis, Chalmers Institute of Technology, 2015, 2015
42015
Light emission from direct bandgap hexagonal SiGe
JEM Haverkort, Y Ren, A Dijkstra, E Fadaly, MA Verheijen, G Reithmaier, ...
Integrated Photonics Research, Silicon and Nanophotonics, ITu4I. 5, 2018
32018
Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)
D Busse, E Fadaly, VT van Lange, JR Suckert, A Dijkstra, M van Tilburg, ...
Novel In-Plane Semiconductor Lasers XIX 11301, 113010K, 2020
12020
Crossed InSb nanowire junctions for Majorana operations
D Car, S Gazibegovic, S Balk, SC Boj, E Fadaly, H Zhang, R op het Veld, ...
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
12016
Light-emitting or light-absorbing component
S Botti, F Bechstedt, JEM Haverkort, EPAM Bakkers, E Fadaly, A Dijkstra
US Patent App. 17/431,356, 2022
2022
Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H
L Vincent, EMT Fadaly, C Renard, WHJ Peeters, M Vettori, F Panciera, ...
Advanced Materials Interfaces, 2102340, 2022
2022
Efficient Light Emission from Hexagonal SiGe
EMT Fadaly, JR Suckert, D Ziss, MAJ Tilburg, C Mao, Y Ren, VT Lange, ...
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
2021
Epitaxy of Hexagonal SiGe Alloys for Light Emission
EMT Fadaly
Technische Universiteit Eindhoven, 2021
2021
Towards a Hexagonal SiGe Semiconductor Laser.
M Tilburg, A Dijkstra, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ...
CLEO: Science and Innovations, SM3M. 6, 2020
2020
Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe.
A Dijkstra, MAJ Tilburg, EMT Fadaly, VT Lange, MA Verheijen, JR Suckert, ...
CLEO: QELS_Fundamental Science, JW2F. 3, 2020
2020
Towards a Hexagonal SiGe Semiconductor Laser
MAJ van Tilburg, A Dijkstra, EMT Fadaly, VT van Lange, MA Verheijen, ...
2020 Conference on Lasers and Electro-Optics, CLEO 2020, 9192798, 2020
2020
Light Emission from Direct Bandgap Hexagonal Silicon Germanium
E Fadaly, A Dijkstra, JR Suckert, M Verheijen, S Koelling, J Finley, S Botti, ...
APS March Meeting Abstracts 2019, S11. 015, 2019
2019
InAsSb Nanowires with Epitaxial Aluminum as a Platform for Topological Quantum Computation
M Pendharkar, S Gazibegovic, J Logan, RO Veld, H Zhang, M Verheijen, ...
MRS Society Fall 2017, 2017
2017
Fabrication of nanowire growth templates by forming pinholes in SiOxon Si
HZ Ternehäll, E Fadaly, M Sadeghi
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
2016
Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires
E Fadaly, I Massiot, M Sadeghi, A Dmitriev, H Zhao
15th International Conference on Nanotechnology, 2015
2015
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