| Intrinsic limits of the sensitivity of CMOS integrated vertical Hall devices J Pascal, L Hébrard, V Frick, JB Kammerer, JP Blondé Sensors and Actuators A: Physical 152 (1), 21-28, 2009 | 41 | 2009 |
| Compact modeling of a magnetic tunnel junction—Part I: Dynamic magnetization model JB Kammerer, M Madec, L Hébrard IEEE Transactions on Electron Devices 57 (6), 1408-1415, 2010 | 40 | 2010 |
| First vertical Hall device in standard 0.35 μm CMOS technology J Pascal, L Hébrard, JB Kammerer, V Frick, JP Blondé Sensors and Actuators A: Physical 147 (1), 41-46, 2008 | 40 | 2008 |
| Horizontal Hall effect sensor with high maximum absolute sensitivity JB Kammerer, L Hébrard, V Frick, P Poure, F Braun IEEE Sensors Journal 3 (6), 700-707, 2003 | 40 | 2003 |
| Compact modeling of a magnetic tunnel junction—Part II: Tunneling current model M Madec, JB Kammerer, L Hébrard IEEE Transactions on Electron Devices 57 (6), 1416-1424, 2010 | 37 | 2010 |
| 3D Hall probe integrated in 0.35 μm CMOS technology for magnetic field pulses measurements J Pascal, L Hébrard, V Frick, JP Blondé 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems …, 2008 | 32 | 2008 |
| Compact modeling of magnetic tunnel junction M Madec, JB Kammerer, F Pregaldiny, L Hebrard, C Lallement 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems …, 2008 | 28 | 2008 |
| CMOS microsystem for AC current measurement with galvanic isolation V Frick, L Hébrard, P Poure, F Anstotz, F Braun IEEE sensors journal 3 (6), 752-760, 2003 | 28 | 2003 |
| Theoretical characterization of the topology of connected carbon nanotubes in random networks J Heitz, Y Leroy, L Hébrard, C Lallement Nanotechnology 22 (34), 345703, 2011 | 25 | 2011 |
| A chopper stabilized biasing circuit suitable for cascaded wheatstone-bridge-like sensors L Hébrard, JB Kammerer, F Braun IEEE Transactions on Circuits and Systems I: Regular Papers 52 (8), 1653-1665, 2005 | 25 | 2005 |
| Electro-thermal high-level modeling of integrated circuits JC Krencker, JB Kammerer, Y Hervé, L Hébrard Microelectronics Journal 45 (5), 491-499, 2014 | 19 | 2014 |
| A two-axis magnetometer using a single magnetic tunnel junction JB Kammerer, L Hébrard, M Hehn, F Braun, P Alnot, A Schuhl IEEE Sensors Journal 4 (3), 313-321, 2004 | 19 | 2004 |
| CMOS microsystem front-end for microtesla resolution magnetic field measurement V Frick, L Hébrard, P Poure, F Braun Analog Integrated Circuits and Signal Processing 36 (1), 165-174, 2003 | 19 | 2003 |
| High resolution shallow vertical Hall sensor operated with four-phase bi-current spinning current L Osberger, V Frick, L Hébrard Sensors and Actuators A: Physical 244, 270-276, 2016 | 16 | 2016 |
| Direct electro-thermal simulation of integrated circuits using standard CAD tools JC Krencker, JB Kammerer, Y Hervé, L Hébrard 2010 16th International Workshop on Thermal Investigations of ICs and …, 2010 | 16 | 2010 |
| Compact modeling of a magnetic tunnel junction using VHDL-AMS: computer aided design of a two-axis magnetometer JB Kammerer, L Hebrard, M Hehn, F Braun, P Alnot, A Schuhl SENSORS, 2004 IEEE, 1558-1561, 2004 | 15 | 2004 |
| CMOS microsystem front-end for microtesla resolution magnetic field measurement V Frick, L Hébrard, P Poure, F Braun ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and …, 2001 | 15 | 2001 |
| ALICE128C: a CMOS full custom ASIC for the readout of silicon strip detectors in the ALICE experiment L Hébrard, F Jundt, C Colledani, CE Kühn, M Ayachi, G Deptuch, JR Lutz, ... | 15 | 1997 |
| Towards a Hall effect magnetic tracking device for MRI JB Schell, JB Kammerer, L Hébrard, E Breton, D Gounot, L Cuvillon, ... 2013 35th Annual International Conference of the IEEE Engineering in …, 2013 | 14 | 2013 |
| Assessment of the spinning-current efficiency in cancelling the 1/f noise of Vertical Hall Devices through accurate FEM modeling M Madec, L Osberger, L Hébrard SENSORS, 2013 IEEE, 1-4, 2013 | 13 | 2013 |
