Internal quantum efficiency in AlGaN with strong carrier localization J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska
Applied Physics Letters 101 (21), 211902, 2012
62 2012 Correlation between carrier localization and efficiency droop in AlGaN epilayers J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska
Applied Physics Letters 103 (1), 011906, 2013
44 2013 Well-width-dependent carrier lifetime in J Mickevičius, G Tamulaitis, E Kuokštis, K Liu, MS Shur, JP Zhang, ...
Applied physics letters 90 (13), 131907, 2007
43 2007 Time-resolved experimental study of carrier lifetime in GaN epilayers J Mickevičius, MS Shur, RSQ Fareed, JP Zhang, R Gaska, G Tamulaitis
Applied Physics Letters 87 (24), 241918, 2005
41 2005 Excitation power dynamics of photoluminescence in K Kazlauskas, G Tamulaitis, J Mickevičius, E Kuokštis, A Žukauskas, ...
Journal of applied physics 97 (1), 013525, 2005
41 2005 Exciton hopping and nonradiative decay in AlGaN epilayers K Kazlauskas, A Žukauskas, G Tamulaitis, J Mickevičius, MS Shur, ...
Applied Physics Letters 87 (17), 172102, 2005
37 2005 Stimulated emission in AlGaN/AlGaN quantum wells with different Al content J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 100 (8), 081902, 2012
36 2012 Migration enhanced MOCVD (MEMOCVDTM ) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ...
physica status solidi (c) 2 (7), 2095-2098, 2005
36 2005 Photoluminescence efficiency droop and stimulated recombination in GaN epilayers J Mickevičius, J Jurkevičius, MS Shur, J Yang, R Gaska, G Tamulaitis
Optics express 20 (23), 25195-25200, 2012
27 2012 Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells J Mickevičius, J Jurkevičius, G Tamulaitis, MS Shur, M Shatalov, J Yang, ...
Optics express 22 (102), A491-A497, 2014
26 2014 Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ...
physica status solidi (a) 202 (1), 126-130, 2005
24 2005 Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
22 2015 Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ...
Applied Physics Letters 86 (4), 041910, 2005
22 2005 Stimulated emission due to localized and delocalized carriers in Al0.35 Ga0.65 N/Al0.49 Ga0.51 N quantum wells J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 101 (4), 041912, 2012
21 2012 Fabrication of photonic structures by means of interference lithography and reactive ion etching I Mikulskas, J Mickevičius, J Vaitkus, R Tomašiūnas, V Grigaliūnas, ...
Applied surface science 186 (1-4), 599-603, 2002
18 2002 Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content A Vaitkevičius, J Mickevičius, D Dobrovolskas, Ö Tuna, C Giesen, ...
Journal of Applied Physics 115 (21), 213512, 2014
17 2014 Migration enhanced metal organic chemical vapor deposition of AlN/GaN/InN-based heterostructures Q Fareed, R Gaska, MS Shur
Semiconductor Device Research Symposium, 402-403, 2003
17 2003 Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
16 2016 Confocal spectroscopy of InGaN LED structures D Dobrovolskas, J Mickevičius, E Kuokštis, G Tamulaitis, M Shur, ...
Journal of Physics D: Applied Physics 44 (13), 135104, 2011
16 2011 Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ...
physica status solidi (b) 252 (5), 1138-1141, 2015
15 2015 