Juras Mickevicius
Juras Mickevicius
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عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Internal quantum efficiency in AlGaN with strong carrier localization
J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska
Applied Physics Letters 101 (21), 211902, 2012
622012
Correlation between carrier localization and efficiency droop in AlGaN epilayers
J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska
Applied Physics Letters 103 (1), 011906, 2013
442013
Well-width-dependent carrier lifetime in quantum wells
J Mickevičius, G Tamulaitis, E Kuokštis, K Liu, MS Shur, JP Zhang, ...
Applied physics letters 90 (13), 131907, 2007
432007
Time-resolved experimental study of carrier lifetime in GaN epilayers
J Mickevičius, MS Shur, RSQ Fareed, JP Zhang, R Gaska, G Tamulaitis
Applied Physics Letters 87 (24), 241918, 2005
412005
Excitation power dynamics of photoluminescence in quantum wells with enhanced carrier localization
K Kazlauskas, G Tamulaitis, J Mickevičius, E Kuokštis, A Žukauskas, ...
Journal of applied physics 97 (1), 013525, 2005
412005
Exciton hopping and nonradiative decay in AlGaN epilayers
K Kazlauskas, A Žukauskas, G Tamulaitis, J Mickevičius, MS Shur, ...
Applied Physics Letters 87 (17), 172102, 2005
372005
Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 100 (8), 081902, 2012
362012
Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ...
physica status solidi (c) 2 (7), 2095-2098, 2005
362005
Photoluminescence efficiency droop and stimulated recombination in GaN epilayers
J Mickevičius, J Jurkevičius, MS Shur, J Yang, R Gaska, G Tamulaitis
Optics express 20 (23), 25195-25200, 2012
272012
Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells
J Mickevičius, J Jurkevičius, G Tamulaitis, MS Shur, M Shatalov, J Yang, ...
Optics express 22 (102), A491-A497, 2014
262014
Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ...
physica status solidi (a) 202 (1), 126-130, 2005
242005
Optical and structural properties of BGaN layers grown on different substrates
A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
222015
Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ...
Applied Physics Letters 86 (4), 041910, 2005
222005
Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells
J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 101 (4), 041912, 2012
212012
Fabrication of photonic structures by means of interference lithography and reactive ion etching
I Mikulskas, J Mickevičius, J Vaitkus, R Tomašiūnas, V Grigaliūnas, ...
Applied surface science 186 (1-4), 599-603, 2002
182002
Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content
A Vaitkevičius, J Mickevičius, D Dobrovolskas, Ö Tuna, C Giesen, ...
Journal of Applied Physics 115 (21), 213512, 2014
172014
Migration enhanced metal organic chemical vapor deposition of AlN/GaN/InN-based heterostructures
Q Fareed, R Gaska, MS Shur
Semiconductor Device Research Symposium, 402-403, 2003
172003
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
162016
Confocal spectroscopy of InGaN LED structures
D Dobrovolskas, J Mickevičius, E Kuokštis, G Tamulaitis, M Shur, ...
Journal of Physics D: Applied Physics 44 (13), 135104, 2011
162011
Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD
T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ...
physica status solidi (b) 252 (5), 1138-1141, 2015
152015
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مقالات 1–20