| Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: on the growth of multilayer films BK Daas, SU Omar, S Shetu, KM Daniels, S Ma, TS Sudarshan, ... Crystal growth & design 12 (7), 3379-3387, 2012 | 51 | 2012 |
| Interface trap-induced nonideality in as-deposited Ni/4H-SiC Schottky barrier diode SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar IEEE Transactions on Electron Devices 62 (2), 615-621, 2014 | 40 | 2014 |
| Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar Journal of Physics D: Applied Physics 47 (29), 295102, 2014 | 26 | 2014 |
| Evidence of minority carrier injection efficiency> 90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection VSN Chava, SU Omar, G Brown, SS Shetu, J Andrews, TS Sudarshan, ... Applied Physics Letters 108 (4), 2016 | 25 | 2016 |
| Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC SS Shetu, SU Omar, KM Daniels, B Daas, J Andrews, S Ma, ... Journal of applied physics 114 (16), 2013 | 12 | 2013 |
| Optically switched graphene/4H-SiC junction bipolar transistor MVS Chandrashekhar, TS Sudarshan, SU Omar, G Brown, SS Shetu US Patent 9,966,491, 2018 | 10 | 2018 |
| Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1 offcut substrate using dichlorosilane as Si precursor SU Omar, MVS Chandrashekhar, IA Chowdhury, TA Rana, TS Sudarshan Journal of Applied Physics 113 (18), 2013 | 10 | 2013 |
| Comparison of SiC epitaxial growth from dichlorosilane and tetrafluorosilane precursors H Song, T Rana, MVS Chandrashekhar, SU Omar, TS Sudarshan ECS Transactions 58 (4), 97, 2013 | 6 | 2013 |
| The role of interface effects and minority carriers in the metal-semiconductor Schottky junction SU Omar University of South Carolina, 2014 | 3 | 2014 |
| In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors HZ Song, SU Omar, T Rana, MVS Chandrashekhar, TS Sudarshan Materials Science Forum 717, 121-124, 2012 | 3 | 2012 |
| Room temperature photoluminescence from 4H-SiC epilayers: Non-destructive estimation of in-grown stacking fault density SU Omar, HZ Song, TS Sudarshan, MVS Chandrashekhar Materials Science Forum 717, 399-402, 2012 | 2 | 2012 |
| Gate-all-around integrated circuit structures having doped subfin SM Cea, AD Lilak, P Keys, C Weber, R Mehandru, AS Murthy, B Guha, ... US Patent App. 17/482,870, 2023 | | 2023 |
| Substrate-less nanowire-based lateral diode integrated circuit structures N Thomson, K Kolluru, KAR Ayan, R Ma, B Orr, N Jack, B Guha, B Greene, ... US Patent App. 17/357,767, 2022 | | 2022 |
| Substrate-free integrated circuit structures B Guha, B Greene, A Jayanthinarasimham, KAR Ayan, B Orr, CH Lin, ... US Patent App. 17/033,418, 2022 | | 2022 |
| Gain of 56 in graphene silicon carbide schottky collector phototransistor (GSCBT) for radiation detection GJ Brown, OU Sabih, SS Shetu, TS Sudarashan, MVS Chandrashekhar 14th IEEE International Conference on Nanotechnology, 314-317, 2014 | | 2014 |
| High gain bipolar photo-transistor operation in graphene/SiC Schottky interfaces: The role of minority carriers G Brown, SU Omar, S Shetu, A Uddin, T Rana, H Song, TS Sudarshan, ... 14th IEEE International Conference on Nanotechnology, 444-447, 2014 | | 2014 |
| Step Controlled Epitaxy on 4 degree and 1 degree Off-Cut 4 H and 6 H-SiC Substrate Using Dichlorosilane S Omar, H Song, I Chowdhury, MVS Chandrashekhar, T Sudarshan Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
| Modeling of erbium segregation during solid phase epitaxial re-crystallization in silicon MQ Huda, AAI Ahmed, SU Omar, MS Mahmood, FM Mohammedy 2009 4th International Conference on Computers and Devices for Communication …, 2009 | | 2009 |
| The role of interface effects and minority carriers in metal-semiconductor Schottky barrier junctions SU Omar | | |
Mvs ChandrashekharUniversity of South Carolinaبريد إلكتروني تم التحقق منه على cec.sc.edu
