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Marco Bellini
Marco Bellini
ABB Switzerland Ltd
Verified email at ch.abb.com
Title
Cited by
Cited by
Year
Characterization of 6.5 kV IGBTs for high-power medium-frequency soft-switched applications
D Dujic, GK Steinke, M Bellini, M Rahimo, L Storasta, JK Steinke
IEEE Transactions on power electronics 29 (2), 906-919, 2013
892013
An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs
AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ...
IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007
692007
An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs
AK Sutton, APG Prakash, B Jun, E Zhao, M Bellini, J Pellish, ...
IEEE Transactions on Nuclear Science 53 (6), 3166-3174, 2006
672006
The radial layout design concept for the bi-mode insulated gate transistor
L Storasta, M Rahimo, M Bellini, A Kopta, UR Vemulapati, N Kaminski
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
632011
Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits
L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ...
IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009
422009
Robust 3.3 kV silicon carbide MOSFETs with surge and short circuit capability
L Knoll, A Mihaila, F Bauer, V Sundaramoorthy, E Bianda, R Minamisawa, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
332017
Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices
B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ...
IEEE transactions on nuclear science 53 (6), 3203-3209, 2006
332006
Proton tolerance of SiGe precision voltage references for extreme temperature range electronics
L Najafizadeh, M Bellini, APG Prakash, GA Espinel, JD Cressler, ...
IEEE Transactions on Nuclear Science 53 (6), 3210-3216, 2006
332006
Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors
M Antoniou, N Lophitis, F Bauer, I Nistor, M Bellini, M Rahimo, ...
IEEE Electron Device Letters 36 (8), 823-825, 2015
302015
Silicon thyristors for ultrahigh power (GW) applications
J Vobeckı, HJ Schulze, P Streit, FJ Niedernostheide, V Botan, J Przybilla, ...
IEEE Transactions on Electron Devices 64 (3), 760-768, 2017
262017
The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn+ pnp) SiGe HBTs on thick-film SOI
M Bellini, B Jun, AK Sutton, AC Appaswamy, P Cheng, JD Cressler, ...
IEEE Transactions on Nuclear Science 54 (6), 2245-2250, 2007
262007
Impact of scaling on the inverse-mode operation of SiGe HBTs
A Appaswamy, M Bellini, WML Kuo, P Cheng, J Yuan, C Zhu, JD Cressler, ...
IEEE transactions on electron devices 54 (6), 1492-1501, 2007
262007
A novel high‐resolution XRF spectrometer for elemental mapping based on a monolithic array of silicon drift detectors and on a polycapillary x‐ray lens
A Longoni, C Fiorini, C Guazzoni, S Buzzetti, M Bellini, L Strüder, ...
X‐Ray Spectrometry: An International Journal 34 (5), 439-445, 2005
262005
A comparison of the effects of X-Ray and proton irradiation on the performance of SiGe precision voltage references
L Najafizadeh, AK Sutton, RM Diestelhorst, M Bellini, B Jun, JD Cressler, ...
IEEE Transactions on Nuclear Science 54 (6), 2238-2244, 2007
232007
New thyristor platform for UHVDC (> 1 MV) transmission
J Vobecky, T Stiasny, V Botan, K Stiegler, U Meier, M Bellini
PCIM Europe 2014; International Exhibition and Conference for Power …, 2014
212014
The current status and future prospects of SiC high voltage technology
A Mihaila, L Knoll, E Bianda, M Bellini, S Wirths, G Alfieri, L Kranz, ...
2018 IEEE International Electron Devices Meeting (IEDM), 19.2. 1-19.2. 4, 2018
202018
A simplified spice based IGBT model for power electronics modules evaluation
F Chimento, N Mora, M Bellini, I Stevanovic, S Tomarchio
IECON 2011-37th Annual Conference of the IEEE Industrial Electronics Society …, 2011
202011
A novel ultra-low loss four inch thyristor for UHVDC
J Vobecky, V Botan, K Stiegler, U Meier, M Bellini
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
192015
X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
M Bellini, B Jun, T Chen, JD Cressler, PW Marshall, D Chen, RD Schrimpf, ...
IEEE transactions on nuclear science 53 (6), 3182-3186, 2006
192006
Vertical 1.2 kV SiC power MOSFETs with high-k/metal gate stack
S Wirths, YC Arango, A Prasmusinto, G Alfieri, E Bianda, A Mihaila, ...
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
182019
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