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Mohamed Ali Zaidi
Mohamed Ali Zaidi
Old Professor of physics Majmaah university and now Professor in faculty of Science at Monastir
Verified email at fsm.rnu.tn - Homepage
Title
Cited by
Cited by
Year
2-D theoretical model for current-voltage characteristics in AlGaN/GaN HEMT’s
M Charfeddine, H Belmabrouk, MA Zaidi, H Maaref
Journal of Modern Physics 3 (8), 881-886, 2012
872012
Defects in epitaxial Si‐doped GaInP
J Krynicki, MA Zaidi, M Zazoui, JC Bourgoin, M DiForte‐Poisson, ...
Journal of applied physics 74 (1), 260-266, 1993
461993
Electrical characterization of traps in AlGaN/GaN FAT-HEMT’s on silicon substrate by CV and DLTS measurements
M Charfeddine, M Gassoumi, H Mosbahi, C Gaquiére, MA Zaidi, H Maaref
Journal of Modern Physics 2011, 2011
392011
Defects in electron irradiated GaInP
MA Zaidi, M Zazoui, JC Bourgoin
Journal of applied physics 73 (11), 7229-7231, 1993
371993
Structural, electric and dielectric properties of Ca0.85Er0.1Ti1−xCo4x/3O3(0 ≤ x ≤ 0.1)
C Rayssi, FIH Rhouma, J Dhahri, K Khirouni, M Zaidi, H Belmabrouk
Applied Physics A 123, 1-13, 2017
342017
Critical behavior in Fe-doped manganites La0. 8Ba0. 2Mn1− xFexO3 (x= 0.15 and x= 0.2)
S Ghodhbane, A Dhahri, N Dhahri, EK Hlil, J Dhahri, M Alhabradi, M Zaidi
Journal of alloys and compounds 580, 558-563, 2013
282013
Minority carrier capture cross section of the EL2 defect in GaAs
HMJCB M. A. Zaidi1
Appl. Phys. Lett., 1992
231992
Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors
N Safta, A Sakly, H Mejri, MA Zaïdi
The European Physical Journal B-Condensed Matter and Complex Systems 53, 35-38, 2006
212006
Poole-Frenkel-assisted emission from deep levels in electron-irradiated germanium
MA Zaidi, JC Bourgoin, H Maaref
Semiconductor science and technology 4 (9), 739, 1989
211989
Large magnetocaloric effect and critical behavior in La 0.7 Ba 0.2 Ca 0.1 Mn 1− x Al x O 3
MA Zaidi, J Dhahri, I Zeydi, T Alharbi, H Belmabrouk
RSC Advances 7 (69), 43590-43599, 2017
162017
Electron traps studied in AlGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy
H Mosbahi, M Gassoumi, M Charfeddine, MA Zaidi, C Gaquière, H Maaref
Journal of Optoelectronics and Advanced Materials 12 (11), 2190, 2010
162010
Defects in electron irradiated n‐type GaP
MA Zaidi, M Zazoui, JC Bourgoin
Journal of applied physics 74 (8), 4948-4952, 1993
161993
Magnetic, magnetocaloric and critical behavior investigation of La0. 7Ca0. 1Pb0. 2Mn1− x−yAlxSnyO3 (x, y= 0.0, 0.05 and 0.075) prepared by a sol–gel method
HBMZ Khadija Dhahri, N. Dhahri, J. Dhahri,a K. Taibi, E. K. Hlil
RSC advances, 43410-43423, 2017
15*2017
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
F Jabli, MA Zaidi, NB Hamadi, S Althoyaib, M Gassoumi
Journal of alloys and compounds 653, 624-628, 2015
152015
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
H Mosbahi, M Gassoumi, I Saidi, H Mejri, C Gaquière, MA Zaidi, H Maaref
Current Applied Physics 13 (7), 1359-1364, 2013
152013
Defects in electron‐irradiated GaAlAs alloys
MA Zaidi, H Maaref, M Zazoui, JC Bourgoin
Journal of applied physics 74 (1), 284-290, 1993
151993
Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca 0.67 La 0.22□ 0.11 Ti (1− x) Cr x O 3− δ perovskite
AB Hassen, FIH Rhouma, M Daoudi, J Dhahri, M Zaidi, N Abdelmoula
RSC advances 9 (34), 19285-19296, 2019
132019
Recombination centers in Czochralski‐grown p‐Si
M Zazoui, MA Zaidi, JC Bourgoin, G Strobl
Journal of applied physics 74 (6), 3944-3947, 1993
121993
Optical analysis of biaxial stress distribution in Al0. 26Ga0. 74N/GaN/Si HEMT's
F Jabli, MA Zaidi, M Gassoumi, H Mosbahi, M Charfeddine, T Alharbi, ...
Journal of Alloys and Compounds 650, 533-536, 2015
112015
Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
M Gassoumi, H Mosbahi, MA Zaidi, C Gaquiere, H Maaref
Semiconductors 47, 1008-1012, 2013
112013
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