2-D theoretical model for current-voltage characteristics in AlGaN/GaN HEMT’s M Charfeddine, H Belmabrouk, MA Zaidi, H Maaref Journal of Modern Physics 3 (8), 881-886, 2012 | 87 | 2012 |
Defects in epitaxial Si‐doped GaInP J Krynicki, MA Zaidi, M Zazoui, JC Bourgoin, M DiForte‐Poisson, ... Journal of applied physics 74 (1), 260-266, 1993 | 46 | 1993 |
Electrical characterization of traps in AlGaN/GaN FAT-HEMT’s on silicon substrate by CV and DLTS measurements M Charfeddine, M Gassoumi, H Mosbahi, C Gaquiére, MA Zaidi, H Maaref Journal of Modern Physics 2011, 2011 | 39 | 2011 |
Defects in electron irradiated GaInP MA Zaidi, M Zazoui, JC Bourgoin Journal of applied physics 73 (11), 7229-7231, 1993 | 37 | 1993 |
Structural, electric and dielectric properties of Ca0.85Er0.1Ti1−xCo4x/3O3(0 ≤ x ≤ 0.1) C Rayssi, FIH Rhouma, J Dhahri, K Khirouni, M Zaidi, H Belmabrouk Applied Physics A 123, 1-13, 2017 | 34 | 2017 |
Critical behavior in Fe-doped manganites La0. 8Ba0. 2Mn1− xFexO3 (x= 0.15 and x= 0.2) S Ghodhbane, A Dhahri, N Dhahri, EK Hlil, J Dhahri, M Alhabradi, M Zaidi Journal of alloys and compounds 580, 558-563, 2013 | 28 | 2013 |
Minority carrier capture cross section of the EL2 defect in GaAs HMJCB M. A. Zaidi1 Appl. Phys. Lett., 1992 | 23 | 1992 |
Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors N Safta, A Sakly, H Mejri, MA Zaïdi The European Physical Journal B-Condensed Matter and Complex Systems 53, 35-38, 2006 | 21 | 2006 |
Poole-Frenkel-assisted emission from deep levels in electron-irradiated germanium MA Zaidi, JC Bourgoin, H Maaref Semiconductor science and technology 4 (9), 739, 1989 | 21 | 1989 |
Large magnetocaloric effect and critical behavior in La 0.7 Ba 0.2 Ca 0.1 Mn 1− x Al x O 3 MA Zaidi, J Dhahri, I Zeydi, T Alharbi, H Belmabrouk RSC Advances 7 (69), 43590-43599, 2017 | 16 | 2017 |
Electron traps studied in AlGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy H Mosbahi, M Gassoumi, M Charfeddine, MA Zaidi, C Gaquière, H Maaref Journal of Optoelectronics and Advanced Materials 12 (11), 2190, 2010 | 16 | 2010 |
Defects in electron irradiated n‐type GaP MA Zaidi, M Zazoui, JC Bourgoin Journal of applied physics 74 (8), 4948-4952, 1993 | 16 | 1993 |
Magnetic, magnetocaloric and critical behavior investigation of La0. 7Ca0. 1Pb0. 2Mn1− x−yAlxSnyO3 (x, y= 0.0, 0.05 and 0.075) prepared by a sol–gel method HBMZ Khadija Dhahri, N. Dhahri, J. Dhahri,a K. Taibi, E. K. Hlil RSC advances, 43410-43423, 2017 | 15* | 2017 |
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs F Jabli, MA Zaidi, NB Hamadi, S Althoyaib, M Gassoumi Journal of alloys and compounds 653, 624-628, 2015 | 15 | 2015 |
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors H Mosbahi, M Gassoumi, I Saidi, H Mejri, C Gaquière, MA Zaidi, H Maaref Current Applied Physics 13 (7), 1359-1364, 2013 | 15 | 2013 |
Defects in electron‐irradiated GaAlAs alloys MA Zaidi, H Maaref, M Zazoui, JC Bourgoin Journal of applied physics 74 (1), 284-290, 1993 | 15 | 1993 |
Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca 0.67 La 0.22□ 0.11 Ti (1− x) Cr x O 3− δ perovskite AB Hassen, FIH Rhouma, M Daoudi, J Dhahri, M Zaidi, N Abdelmoula RSC advances 9 (34), 19285-19296, 2019 | 13 | 2019 |
Recombination centers in Czochralski‐grown p‐Si M Zazoui, MA Zaidi, JC Bourgoin, G Strobl Journal of applied physics 74 (6), 3944-3947, 1993 | 12 | 1993 |
Optical analysis of biaxial stress distribution in Al0. 26Ga0. 74N/GaN/Si HEMT's F Jabli, MA Zaidi, M Gassoumi, H Mosbahi, M Charfeddine, T Alharbi, ... Journal of Alloys and Compounds 650, 533-536, 2015 | 11 | 2015 |
Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method M Gassoumi, H Mosbahi, MA Zaidi, C Gaquiere, H Maaref Semiconductors 47, 1008-1012, 2013 | 11 | 2013 |