متابعة
Abdulaziz Almutairi
Abdulaziz Almutairi
Department of Engineering, University of Cambridge
بريد إلكتروني تم التحقق منه على cam.ac.uk
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Formation of moiré interlayer excitons in space and time
D Schmitt, JP Bange, W Bennecke, AA AlMutairi, G Meneghini, ...
Nature 608 (7923), 499-503, 2022
932022
Label-Free and Recalibrated Multilayer MoS2 Biosensor for Point-of-Care Diagnostics
H Park, G Han, SW Lee, H Lee, SH Jeong, M Naqi, AA AlMutairi, YJ Kim, ...
ACS applied materials & interfaces 9 (50), 43490-43497, 2017
762017
PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices
AA AlMutairi, D Yin, Y Yoon
IEEE Electron Device Letters 39 (1), 151-154, 2017
502017
On MoS2 Thin-Film Transistor Design Consideration for a NO2 Gas Sensor
H Im, AA AlMutairi, S Kim, M Sritharan, S Kim, Y Yoon
ACS sensors 4 (11), 2930-2936, 2019
292019
In situ studies of germanium-tin and silicon-germanium-tin thermal stability
JH Fournier-Lupien, D Chagnon, P Lévesque, AAA AlMutairi, S Wirths, ...
ECS Transactions 64 (6), 903, 2014
262014
Assessment of high-frequency performance limit of black phosphorus field-effect transistors
D Yin, AA AlMutairi, Y Yoon
IEEE Transactions on Electron Devices 64 (7), 2984-2991, 2017
242017
A Wafer‐Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching
H Park, A Sen, M Kaniselvan, AA AlMutairi, A Bala, LP Lee, Y Yoon, S Kim
Advanced Materials 35 (14), 2210715, 2023
222023
Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
H Park, J Lee, G Han, AA AlMutairi, YH Kim, J Lee, YM Kim, YJ Kim, ...
Communications Materials 2 (1), 94, 2021
202021
Assessment of germanane field-effect transistors for CMOS technology
Y Zhao, AA AlMutairi, Y Yoon
IEEE Electron Device Letters 38 (12), 1743-1746, 2017
162017
Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware
D Joksas, AA AlMutairi, O Lee, M Cubukcu, A Lombardo, H Kurebayashi, ...
Advanced Intelligent Systems 4 (8), 2200068, 2022
152022
Performance limit projection of germanane field-effect transistors
AA AlMutairi, Y Zhao, D Yin, Y Yoon
IEEE Electron Device Letters 38 (5), 673-676, 2017
142017
High-responsivity reduced graphene oxide gel photodetectors for visible-light detection with a large detection area and an end-contact interface
D Alsaedi, M Irannejad, KH Ibrahim, A Almutairi, O Ramahi, M Yavuz
Journal of Materials Chemistry C 5 (4), 882-888, 2017
142017
Ultrafast dynamics of bright and dark excitons in monolayer WSe2 and heterobilayer WSe2/MoS2
JP Bange, P Werner, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ...
2D Materials 10 (3), 035039, 2023
72023
Device Performance Assessment of Monolayer HfSe2: A New Layered Material Compatible With High-HfO2
AA AlMutairi, Y Yoon
IEEE Electron Device Letters 39 (11), 1772-1775, 2018
62018
High operation stability and different sensing mechanisms in graphene oxide gel photodetectors utilizing a thin polymeric layer
D Alsaedi, M Irannejad, K Ibrahim, AA AlMutairi, K Musselman, ...
ACS Applied Electronic Materials 2 (5), 1203-1209, 2020
32020
Ultrafast nano-imaging of dark excitons
D Schmitt, JP Bange, W Bennecke, G Meneghini, AA AlMutairi, ...
arXiv preprint arXiv:2305.18908, 2023
22023
Probing correlations in the exciton landscape of a moir\'e heterostructure
JP Bange, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ...
arXiv preprint arXiv:2303.17886, 2023
22023
Probing electron-hole Coulomb correlations in the exciton landscape of a twisted semiconductor heterostructure
JP Bange, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ...
Science Advances 10 (6), eadi1323, 2024
12024
Memristors, Spintronics and 2D Materials for Future Computing Systems
D Joksas, A AlMutairi, O Lee, M Cubukcu, A Lombardo, H Kurebayashi, ...
arXiv preprint arXiv:2203.06147, 2022
12022
Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology
A Xhameni, AA AlMutairi, A Lombardo
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 529-531, 2023
2023
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20