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Hesameddin Ilatikhameneh
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Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
2322015
Electrically Tunable Bandgaps in Bilayer MoS2
T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen
Nano letters 15 (12), 8000-8007, 2015
2042015
Efficient and realistic device modeling from atomic detail to the nanoscale
JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ...
Journal of Computational Electronics 12 (4), 592-600, 2013
1232013
Few-layer phosphorene: An ideal 2D material for tunnel transistors
TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman
Scientific reports 6 (1), 28515, 2016
1162016
Understanding contact gating in Schottky barrier transistors from 2D channels
A Prakash, H Ilatikhameneh, P Wu, J Appenzeller
Scientific reports 7 (1), 1-9, 2017
1062017
Dielectric engineered tunnel field-effect transistor
H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (10), 1097-1100, 2015
1052015
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
1002015
Complementary black phosphorus tunneling field-effect transistors
P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ...
ACS nano 13 (1), 377-385, 2018
932018
Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass
H Ilatikhameneh, T Ameen, N Bozidar, Y Tan, G Klimeck, R Rahman
Scientific Reports 6 (doi:10.1038/srep31501), 31501, 2016
902016
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures
C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ...
ACS nano 11 (3), 2785-2793, 2017
832017
Optimum high-k oxide for the best performance of ultra-scaled double-gate MOSFETs
M Salmani-Jelodar, H Ilatikhameneh, S Kim, K Ng, P Sarangapani, ...
IEEE Transactions on Nanotechnology 15 (6), 904-910, 2016
802016
Thickness engineered tunnel field-effect transistors based on phosphorene
FW Chen, H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman
IEEE Electron Device Letters 38 (1), 130-133, 2016
722016
Scaling theory of electrically doped 2D transistors
H Ilatikhameneh, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (7), 726-728, 2015
532015
Configurable electrostatically doped high performance bilayer graphene tunnel FET
FW Chen, H Ilatikhameneh, G Klimeck, Z Chen, R Rahman
IEEE Journal of the Electron Devices Society 4 (3), 124-128, 2016
512016
Can homojunction tunnel FETs scale below 10 nm?
H Ilatikhameneh, G Klimeck, R Rahman
IEEE Electron Device Letters 37 (1), 115-118, 2015
49*2015
From Fowler–Nordheim to nonequilibrium Green’s function modeling of tunneling
H Ilatikhameneh, RB Salazar, G Klimeck, R Rahman, J Appenzeller
IEEE Transactions on Electron Devices 63 (7), 2871-2878, 2016
462016
Design guidelines for sub-12 nm nanowire MOSFETs
M Salmani-Jelodar, SR Mehrotra, H Ilatikhameneh, G Klimeck
IEEE Transactions on Nanotechnology 14 (2), 210-213, 2015
452015
Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications
H Ilatikhameneh, T Ameen, F Chen, H Sahasrabudhe, G Klimeck, ...
IEEE Transactions on Nanotechnology 17 (2), 293-298, 2018
442018
A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations
RB Salazar, H Ilatikhameneh, R Rahman, G Klimeck, J Appenzeller
Journal of Applied Physics 118 (16), 2015
39*2015
Switching mechanism and the scalability of vertical-TFETs
F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman
IEEE Transactions on Electron Devices 65 (7), 3065-3068, 2018
372018
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