Akil K. Sutton
Akil K. Sutton
Senior Engineer, International Business Machines
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
Multiple-bit upset in 130 nm CMOS technology
AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006
1232006
An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs
AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ...
IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007
612007
An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs
AK Sutton, APG Prakash, B Jun, E Zhao, M Bellini, J Pellish, ...
IEEE Transactions on Nuclear Science 53 (6), 3166-3174, 2006
552006
Application of RHBD techniques to SEU hardening of third-generation SiGe HBT logic circuits
R Krithivasan, PW Marshall, M Nayeem, AK Sutton, WM Kuo, ...
IEEE Transactions on Nuclear Science 53 (6), 3400-3407, 2006
542006
A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs
AK Sutton, BM Haugerud, APG Prakash, B Jun, JD Cressler, CJ Marshall, ...
IEEE Transactions on Nuclear Science 52 (6), 2358-2365, 2005
522005
A 2 mW, sub-2 dB noise figure, SiGe low-noise amplifier for X-band high-altitude or space-based radar applications
TK Thrivikraman, WML Kuo, JP Comeau, AK Sutton, JD Cressler, ...
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 629-632, 2007
482007
Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies
JA Pellish, RA Reed, RD Schrimpf, ML Alles, M Varadharajaperumal, ...
IEEE Transactions on Nuclear Science 53 (6), 3298-3305, 2006
482006
Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs
AK Sutton, BM Haugerud, Y Lu, WML Kuo, JD Cressler, PW Marshall, ...
IEEE transactions on nuclear science 51 (6), 3736-3742, 2004
482004
Proton radiation effects in 4H-SiC diodes and MOS capacitors
Z Luo, T Chen, AC Ahyi, AK Sutton, BM Haugerud, JD Cressler, ...
IEEE transactions on nuclear science 51 (6), 3748-3752, 2004
462004
The effects of irradiation temperature on the proton response of SiGe HBTs
APG Prakash, AK Sutton, RM Diestelhorst, G Espinel, J Andrews, B Jun, ...
IEEE Transactions on Nuclear Science 53 (6), 3175-3181, 2006
422006
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ...
IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009
412009
Laser-induced current transients in silicon-germanium HBTs
JA Pellish, RA Reed, D McMorrow, JS Melinger, P Jenkins, AK Sutton, ...
IEEE Transactions on Nuclear Science 55 (6), 2936-2942, 2008
402008
The effects of radiation on 1/f noise in complementary (npn+ pnp) SiGe HBTs
E Zhao, AK Sutton, BM Haugerud, JD Cressler, PW Marshall, RA Reed, ...
IEEE transactions on nuclear science 51 (6), 3243-3249, 2004
352004
A 7nm CMOS technology platform for mobile and high performance compute application
S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017
342017
Proton and gamma radiation effects in a new first-generation SiGe HBT technology
BM Haugerud, MM Pratapgarhwala, JP Comeau, AK Sutton, ...
Solid-state electronics 50 (2), 181-190, 2006
342006
A generalized SiGe HBT single-event effects model for on-orbit event rate calculations
JA Pellish, RA Reed, AK Sutton, RA Weller, MA Carts, PW Marshall, ...
IEEE Transactions on Nuclear Science 54 (6), 2322-2329, 2007
332007
Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure
J Metcalfe, DE Dorfan, AA Grillo, A Jones, F Martinez-McKinney, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
322007
Single event upset mechanisms for low-energy-deposition events in SiGe HBTs
EJ Montes, RA Reed, JA Pellish, ML Alles, RD Schrimpf, RA Weller, ...
IEEE Transactions on Nuclear Science 55 (3), 1581-1586, 2008
272008
Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials
JP Comeau, AK Sutton, BM Haugerud, JD Cressler, WML Kuo, ...
IEEE transactions on nuclear science 51 (6), 3743-3747, 2004
272004
The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments
B Jun, AK Sutton, RM Diestelhorst, GJ Duperon, JD Cressler, JD Black, ...
IEEE Transactions on Nuclear Science 54 (6), 2100-2105, 2007
252007
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